Publications by authors named "Rafal Lewandkow"
Interfacial Polarization of Thin Alq, Gaq, and Erq Films on GaN(0001).
Materials (Basel)
February 2022
Article Synopsis
- The report investigates the electronic structure of three organic layers (Alq, Gaq, Erq) on GaN semiconductor, focusing on their interfaces under ultrahigh vacuum conditions.
- Ultraviolet and X-ray photoelectron spectroscopy methods are utilized to create band energy diagrams, revealing the highest occupied molecular orbital (HOMO) levels for each layer.
- Alq maintains the vacuum level of GaN, while Gaq and Erq lower it significantly, with interface dipoles measured at varying levels for each layer.
This paper concerns research on magnesium oxide layers in terms of their potential use as a gate material for SiC MOSFET structures. The two basic systems of MgO/SiC(0001) and MgO/graphite/SiC(0001) were deeply investigated in situ under ultrahigh vacuum (UHV). In both cases, the MgO layers were obtained by a reactive evaporation method.
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