Dataset on large area nano-crystalline graphite film (NCG) grown on SiO using plasma-enhanced chemical vapour deposition.

A Si wafer coated with a low temperature oxide (LTO) was used as substrate (Si/SiO) during the deposition of a thick nano-crystalline graphite (NCG) film by means of plasma-enhanced chemical vapour deposition (PECVD) procedure. The process parameters, the atomic force (AFM) and scanning electron (SEM) micrographs, Raman spectrum and X-ray diffraction (XRD) pattern are herein illustrated. The as deposited NCG film was electrochemically pretreated (3 mA applied current, during 240 s, in 10 mM phosphate buffer saline (PBS) solution containing 0.