Numerical simulation of the anisotropic elastic field generated by a misfit dislocations along a NiSi2/Si/(001)GaAs heterotwin interface.

The purpose of this work is the numerical resolution, in the case of anisotropic elasticity, of the problem of a misfit dislocation located between an infinite substrate and two-layer composite. This case is obtained where the period of a network of misfit dislocations is taken as much greater than the thickness of the two foils. As a result, in the vicinity of the dislocation, the limiting boundary conditions will be close to those of Volterra translation dislocation.