Two-dimensional (2D) materials have many applications ranging from heterostructure electronics to nanofluidics and quantum technology. In order to effectively utilize 2D materials towards these ends, they must be transferred and integrated into complex device geometries. In this report, we investigate two conventional methods for the transfer of 2D materials: viscoelastic stamping with polydimethylsiloxane (PDMS) and a heated transfer with poly bis-A carbonate (PC).
View Article and Find Full Text PDFRapid sensing of molecules is increasingly important in many studies and applications, such as DNA sequencing and protein identification. Here, beyond atomically thin 2D nanopores, we conceptualize, simulate and experimentally demonstrate coupled, guiding and reusable bilayer nanopore platforms, enabling advanced ultrafast detection of unmodified molecules. The bottom layer can collimate and decelerate the molecule before it enters the sensing zone, and the top 2D pore (~2 nm) enables position sensing.
View Article and Find Full Text PDFRecently discovered two-dimensional ferromagnetic materials (2DFMs) have rapidly gained much interest in the fields of spintronics and computing, where they may prove powerful tools for miniaturizing devices such as magnetic tunnel junctions and spin-transfer torque memory bits. In addition, heterojunctions and twisted bilayer stacks of such materials may yield exotic spin textures. However, preparation of such devices is complicated by the air sensitivity of many 2DFMs.
View Article and Find Full Text PDFWe demonstrate DNA translocations through silicon nitride pores formed by simple chemical etching on glass substrates using microscopic amounts of hydrofluoric acid. DNA translocations and transmission electron microscopy (TEM) prove the fabrication of nanopores and allow their characterization. From ionic measurements on 318 chips, we report the effective pore diameters ranging from zero (pristine membranes) and sub-nm to over 100 nm, within 50 μm diameter membranes.
View Article and Find Full Text PDFInverting a semiconducting channel is the basis of all field-effect transistors. In silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs), a gate dielectric mediates this inversion. Access to inversion layers may be granted by interfacing ultrathin low-dimensional semiconductors in heterojunctions to advance device downscaling.
View Article and Find Full Text PDFWe fabricate on-chip solid-state nanofluidic-2D nanopore systems that can limit the range of motion for DNA in the sensing region of a nanopore. We do so by creating devices containing one or more silicon nitride pores and silicon nitride pillars supporting a 2D pore that orient DNA within a nanopore device to a restricted geometry, yet allow the free motion of ions to maintain a high signal-to-noise ratio. We discuss two concepts with two and three independent electrical connections and corresponding nanopore chip device architectures to achieve this goal in practice.
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