J Electron Microsc Tech
June 1991
We describe a method for plan-view transmission electron microscopy (TEM) sample preparation that takes advantage of extreme etch-rate selectivity in GaAs and AlAs in HF/H2O solutions. GaAs/InxGa1-xAs/GaAs strained-layer films (x = 0.05, 0.
View Article and Find Full Text PDFPhys Rev B Condens Matter
June 1988