Publications by authors named "RM Tromp"

Energy-Dispersive X-Ray Spectroscopy (EDS) is a technique frequently used in Scanning and Transmission Electron Microscopes to study the elemental composition of a sample. Briefly, high energy electrons of the incident electron beam may ionize an electron from a core shell. The decay of this excited state may result in the emission of a characteristic X-ray photon or Auger-Meitner electron.

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A new, complementary technique based on Photo Emission Electron Microscopy (PEEM) is demonstrated. In contrast to PEEM, the sample is placed on a transparent substrate and is illuminated from the back side while electrons are collected from the other (front) side. In this paper, the working principle of this technique, coined back-illuminated PEEM (BIPEEM), is described.

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  • The LEEM-IV spectra of few-layer graphene reveal specific energy minima that vary with the number of layers, while low-energy TEM spectra show transmission maxima at those corresponding energy levels.
  • The observed patterns in both LEEM and TEM can be explained through electron wave function interference in an elastic scattering model.
  • A new model is proposed that incorporates both elastic and inelastic scattering effects, allowing for a self-consistent extraction of Mean Free Path (MFP) values and a comparison with existing research.
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In a Low Energy Electron Microscope (LEEM) the sample is illuminated with an electron beam with typical electron landing energies from 0-100 eV. The energy spread of the electron beam is determined by the characteristics of the electron source. For the two most commonly used electron sources, LaB and cold field emission W, typical energy spreads ΔE are 0.

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  • In 'magic angle' twisted bilayer graphene, a flat band leads to correlated insulating behavior and superconductivity, but the variable moiré structure affects device conductance.
  • By employing aberration-corrected Low Energy Electron Microscopy, researchers found smaller spatial variations in the moiré pattern than earlier studies and observed thermal fluctuations of collective atomic displacements.
  • The study determined that thermal annealing can reduce local disorder without any untwisting detected at temperatures up to 600°C, and identified edge dislocations that may reveal unique electronic properties.
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Crystalline films of pentacene molecules, two to four monolayers in thickness, are grown via in situ sublimation on silicon substrates in the ultrahigh vacuum chamber of a low-energy electron microscope. It is observed that the diffraction pattern of the pentacene layers fades upon irradiation with low-energy electrons. The damage cross section is found to increase by more than an order of magnitude for electron energies from 0 to 10 eV and by another order of magnitude from 10 to 40 eV.

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  • Transmission electron microscopy at very low energy reduces damage to sensitive biological samples by using a modified setup with an additional electron source for imaging in the 0-30 eV range.
  • The technique, demonstrated with materials like free-standing graphene, achieves imaging and spectroscopy in both transmission and reflection modes at nanometer resolution.
  • Notable results include detailed images of gold nanoparticles and DNA origami rectangles, showing the potential of eV-TEM for safe, high-resolution imaging of biological samples.
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For many complex materials systems, low-energy electron microscopy (LEEM) offers detailed insights into morphology and crystallography by naturally combining real-space and reciprocal-space information. Its unique strength, however, is that all measurements can easily be performed energy-dependently. Consequently, one should treat LEEM measurements as multi-dimensional, spectroscopic datasets rather than as images to fully harvest this potential.

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  • Extreme ultraviolet (EUV) lithography is a cutting-edge technology enabling the creation of tiny electronic circuits under 20 nm in size, with low-energy electrons (LEEs) playing a key role in this process.
  • Researchers used advanced techniques like LEE microscopy, electron energy loss spectroscopy, and atomic force microscopy to examine how electrons in the range of 0-40 eV affect a specific EUV resist material, revealing that even very low-energy electrons can trigger significant chemical reactions.
  • A proposed reaction model suggests that a small quantity of electrons (about 10 per molecule) is sufficient to render the resist material insoluble, aligning with the observed sensitivity of tin-oxo cage materials in EUV lithography.
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In contrast to the in-plane transport electron mean-free path in graphene, the transverse mean-free path has received little attention and is often assumed to follow the "universal" mean-free path (MFP) curve broadly adopted in surface and interface science. Here we directly measure transverse electron scattering through graphene from 0 to 25 eV above the vacuum level both in reflection using low energy electron microscopy and in transmission using electronvolt transmission electron microscopy. From these data, we obtain quantitative MFPs for both elastic and inelastic scattering.

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  • Low-energy electron microscopy (LEEM) is used to measure the local work function of surfaces with high lateral resolution but can produce artifacts due to surface electrostatic fields.
  • These artifacts occur near areas of work function discontinuities, extending hundreds of nanometers, and can lead to an overestimation of the true work function difference by 1.6 times when using standard analysis methods.
  • Comparing LEEM data with ray-tracing simulations provides a more accurate estimate of work function differences, as demonstrated on a mixed-terminated strontium titanate surface.
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Measurement of chromatic aberration in a Low Energy Electron Microscope (LEEM) or Photo Electron Emission Microscope (PEEM) is necessary for quantitative image interpretation, and for accurate correction of chromatic aberration in an aberration-corrected instrument. While methods have been developed for measuring the spherical aberration coefficient, C, measuring the chromatic aberration coefficient, C, remains a more difficult task. Here a novel method is introduced to simplify such measurements.

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The effects of exposure to ionizing radiation are central in many areas of science and technology, including medicine and biology. Absorption of UV and soft-x-ray photons releases photoelectrons, followed by a cascade of lower energy secondary electrons with energies down to 0 eV. While these low energy electrons give rise to most chemical and physical changes, their interactions with soft materials are not well studied or understood.

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  • Charge transport in many systems is influenced more by local features than by a single resistance measure, making understanding local electronic potential crucial for device analysis.
  • A new low-energy electron microscopy (LEEM) potentiometry method has been developed that is fast, non-invasive, and allows for easy zooming and a large field of view.
  • This method utilizes a mirror mode transition sensitive to local electrostatic surface potentials, enabling broader application across materials, and has been successfully demonstrated on Si(111) surfaces and metal-semiconductor junctions.
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The effects of space charge, aberrations and relativity on temporal compression are investigated for a compact spherical electrostatic capacitor (α-SDA). By employing the three-dimensional (3D) field simulation and the 3D space charge model based on numerical General Particle Tracer and SIMION, we map the compression efficiency for a wide range of initial beam size and single-pulse electron number and determine the optimum conditions of electron pulses for the most effective compression. The results demonstrate that both space charge effects and aberrations prevent the compression of electron pulses into the sub-ps region if the electron number and the beam size are not properly optimized.

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  • Charge transport in systems often depends on local features rather than a single global resistance value, highlighting the need for techniques that map local electronic potentials.
  • A new potentiometry method using low-energy electron microscopy (LEEM) has been developed, which is fast, has a large field of view, and is non-invasive, but is limited by the availability of characteristic reflectivity features in some materials.
  • The paper introduces an alternative low-energy electron potentiometry (LEEP) method based on a universal mirror mode transition, which is effective for a wider range of materials, and demonstrates its application in analyzing electrostatic surface potential variations and the Schottky effect in metal-semiconductor junctions.
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Accurately measuring defocus in cathode lens instruments (Low Energy Electron Microscopy - LEEM, and Photo Electron Emission Microscopy - PEEM) is a pre-requisite for quantitative image analysis using Fourier Optics (FO) or Contrast Transfer Function (CTF) image simulations. In particular, one must establish a quantitative relation between lens excitation and image defocus. One way to accomplish this is the Real-Space Microspot LEED method, making use of the accurately known angles of diffracted electron beams, and the defocus-dependent shifts of their corresponding real-space images.

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  • High electron mobility is a crucial property of graphene, especially in its heterostructures with hexagonal boron nitride, widely used in research and applications.
  • Despite the common assumption that the electronic states in these layered systems do not couple significantly, this study reveals that graphene and boron nitride bands show no interaction across a broad energy range.
  • The angle-resolved reflected-electron spectroscopy method we utilized can be applied to investigate interactions in other van der Waals layered materials, enhancing our understanding of how electronic coupling contributes to the creation of novel materials.
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  • The electronic band structure of materials determines their properties by defining the allowed energy states for electrons.
  • Measuring occupied bands is easy, but characterizing unoccupied bands (those above the Fermi level) has been challenging until now.
  • The authors present a new technique using low-energy electron microscopy that can directly measure these unoccupied bands in graphene layers with high spatial resolution and potential application to various nanomaterials.
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Charge transport measurements form an essential tool in condensed matter physics. The usual approach is to contact a sample by two or four probes, measure the resistance and derive the resistivity, assuming homogeneity within the sample. A more thorough understanding, however, requires knowledge of local resistivity variations.

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Chromatic aberration correction in light optics began with the invention of a two-color-corrected achromatic crown/flint lens doublet by Chester Moore Hall in 1730. Such color correction is necessary because any single glass shows dispersion (i.e.

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We observe the growth of crystalline SiC nanoparticles on Si(001) at 900 °C using in situ electron microscopy. Following nucleation and growth of the SiC, there is a massive migration of Si, forming a crystalline Si mound underneath each nanoparticle that lifts it 4-5 nm above the initial growth surface. The volume of the Si mounds is roughly five to seven times the volume of the SiC nanoparticles.

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In this paper I briefly review the use of electrostatic electron mirrors to correct the aberrations of the cathode lens objective lens in low energy electron microscope (LEEM) and photo electron emission microscope (PEEM) instruments. These catadioptric systems, combining electrostatic lens elements with a reflecting mirror, offer a compact solution, allowing simultaneous and independent correction of both spherical and chromatic aberrations. A comparison with catadioptric systems in light optics informs our understanding of the working principles behind aberration correction with electron mirrors, and may point the way to further improvements in the latter.

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We describe the design and practical realization of a versatile sample stage with six degrees of freedom. The stage was designed for use in a Low Energy Electron Microscope, but its basic design features will be useful for numerous other applications. The degrees of freedom are X, Y, and Z, two tilts, and azimuth.

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A novel solution for high intensity electron pulse compression in both space and time is proposed in this paper. Based on the unique properties of the central-force electrostatic field of a spherical electrostatic capacitor, the newly developed α-Spherical Deflector Analyzer (α-SDA) with 2π total deflection is utilized for the practical realization of femtosecond electron pulse compression. The mirror symmetry of the system at π deflection causes not only the cancellation of the geometrical and chromatic aberrations at 2π, but also leads to aberration-free time reversal of the electron pulse in the exit plane.

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