All-magnonic repeater based on bistability.

Bistability, a universal phenomenon found in diverse fields such as biology, chemistry, and physics, describes a scenario in which a system has two stable equilibrium states and resets to one of the two states. The ability to switch between these two states is the basis for a wide range of applications, particularly in memory and logic operations. Here, we present a universal approach to achieve bistable switching in magnonics, the field processing data using spin waves.

Magnetic anisotropy and GGG substrate stray field in YIG films down to millikelvin temperatures.

Quantum magnonics investigates the quantum-mechanical properties of magnons, such as quantum coherence or entanglement for solid-state quantum information technologies at the nanoscale. The most promising material for quantum magnonics is the ferrimagnetic yttrium iron garnet (YIG), which hosts magnons with the longest lifetimes. YIG films of the highest quality are grown on a paramagnetic gadolinium gallium garnet (GGG) substrate.

Deeply nonlinear excitation of self-normalized short spin waves.

Spin waves are ideal candidates for wave-based computing, but the construction of magnetic circuits is blocked by a lack of an efficient mechanism to excite long-running exchange spin waves with normalized amplitudes. Here, we solve the challenge by exploiting a deeply nonlinear phenomenon for forward volume spin waves in 200-nm-wide nanoscale waveguides and validate our concept using microfocused Brillouin light scattering spectroscopy. An unprecedented nonlinear frequency shift of more than 2 GHz is achieved, corresponding to a magnetization precession angle of 55° and enabling the excitation of spin waves with wavelengths down to 200 nm.

Nonlinear amplification of microwave signals in spin-torque oscillators.

Spintronics-based microwave devices, such as oscillators and detectors, have been the subject of intensive investigation in recent years owing to the potential reductions in size and power consumption. However, only a few concepts for spintronic amplifiers have been proposed, typically requiring complex device configurations or material stacks. Here, we demonstrate a spintronic amplifier based on two-terminal magnetic tunnel junctions (MTJs) produced with CMOS-compatible material stacks that have already been used for spin-transfer torque memories.