Epitaxial BaSnOthin films with low dislocation density grown on lattice matched LaInOsubstrates.

The use of LaInOwith (110) surface orientation was investigated as a novel orthorhombic substrate for the epitaxial growth of semiconducting BaSnOthin films. On the basis of reflection high-energy electron diffraction, energy dispersive x-ray analysis and inductively coupled plasma-optical emission spectrometry measurements, we revealed that slight Ba doping of LaInOcrystals is beneficial to stabilize the substrate surface, which facilitates the epitaxial growth of well-ordered BaSnOthin films by pulsed laser deposition. Fully strained BaSnOfilms without misfit dislocations found by means of transmission electron microscopy were achieved due to the negligible lattice mismatch between BaSnOfilm and Ba-doped LaInOsubstrate.

Melt growth and properties of bulk BaSnO single crystals.

We present the first-time growth of bulk BaSnO single crystals from the melt by direct solidification, their basic electrical and optical properties as well as their structural quality. Our measurement of the melting point (MP) of BaSnO amounts to 1855 °C  ±  25 K. At this temperature an intensive decomposition and non-stoichiometric evaporation takes place as the partial pressure of SnO(g) is about 90 times higher than that of BaO(g).