Long indium-rich InGaAs nanowires by SAG-HVPE.

We demonstrate the selective area growth of InGaAs nanowires (NWs) on GaAs (111)B substrates using hydride vapor phase epitaxy (HVPE). A high growth rate of more than 50m hand high aspect ratio NWs were obtained. Composition along the NWs was investigated by energy dispersive x-ray spectroscopy giving an average indium composition of 84%.

Detection of Be dopant pairing in VLS grown GaAs nanowires with twinning superlattices.

Control over the distribution of dopants in nanowires is essential for regulating their electronic properties, but perturbations in nanowire microstructure may affect doping. Conversely, dopants may be used to control nanowire microstructure including the generation of twinning superlattices (TSLs)-periodic arrays of twin planes. Here the spatial distribution of Be dopants in a GaAs nanowire with a TSL is investigated using atom probe tomography.

off-axis electron holography of real-time dopant diffusion in GaAs nanowires.

Off-axis electron holography was used to reveal remote doping in GaAs nanowires occurring duringannealing in a transmission electron microscope. Dynamic changes to the electrostatic potential caused by carbon dopant diffusion upon annealing were measured across GaAs nanowires with radial p-p+ core-shell junctions. Electrostatic potential profiles were extracted from holographic phase maps and built-in potentials () and depletion layer widths (DLWs) were estimated as function of temperature over 300-873 K.

Interplay between the Directing Group and Multifunctional Acetate Ligand in Pd-Catalyzed -Acetoxylation of Unsymmetrical Dialkyl-Substituted Alkynes.

The cooperative action of the acetate ligand, the 2-pyridyl sulfonyl (SOPy) directing group on the alkyne substrate, and the palladium catalyst has been shown to be crucial for controlling reactivity, regioselectivity, and stereoselectivity in the acetoxylation of unsymmetrical internal alkynes under mild reaction conditions. The corresponding alkenyl acetates were obtained in good yields with complete levels of β-regioselectivity and -acetoxypalladation stereocontrol. Experimental and computational analyses provide insight into the reasons behind this delicate interplay between the ligand, directing group, and the metal in the reaction mechanism.

Thermal Conductivity of GaAs Nanowire Arrays Measured by the 3ω Method.

Vertical nanowire (NW) arrays are the basis for a variety of nanoscale devices. Understanding heat transport in these devices is an important concern, especially for prospective thermoelectric applications. To facilitate thermal conductivity measurements on as-grown NW arrays, a common NW-composite device architecture was adapted for use with the 3ω method.