Benzohexacene guide in accurate determination of field effect carrier mobilities in long acenes.

Oligoacenes are promising materials in the field of electronic devices since they exhibit high charge carrier mobility and more particularly as a semiconductor in thin film transistors. Herein, we investigate the field effect charge carrier mobility of benzohexacene, recently obtained by cheletropic decarbonylation at moderate temperature. Initially, high performance bottom contact organic thin-film transistors (OTFTs) were fabricated using tetracene to validate the fabrication process.

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si Ge and Si layers.

In this paper, we present an enhanced differential Hall effect measurement method (DHE) for ultrathin Si and SiGe layers for the investigation of dopant activation in the surface region with sub-nanometre resolution. In the case of SiGe, which constitutes the most challenging process, we show the reliability of the SC1 chemical solution (NHOH/HO/HO) with its slow etch rate, stoichiometry conservation and low roughness generation. The reliability of a complete DHE procedure, with an etching step as small as 0.