Layered lead halide perovskites are attractive materials for optoelectronic applications. In this work, temperature-dependent photoluminescence (PL) as well as pressure-dependent Raman and PL studies of lead bromide comprising small disc shape 1,2,4-triazolium cations (Tz) are reported. Temperature-dependent studies reveal that at room-temperature (RT) TzPbBr exhibits narrow emission at 2.
View Article and Find Full Text PDFPhotoacoustic spectroscopy is a powerful tool for investigating semiconductors and determining some of their basic properties. However, generating a signal that is large enough for the investigated samples is still challenging. To address this, the focus is on enhancing photoacoustic (PA) signal intensity in a non-complex way, which does not require changing any part of an experimental setup.
View Article and Find Full Text PDFThe Fermi level position at the interface of a heterostructure is a critical factor for device functionality, strongly influenced by surface-related phenomena. In this study, contactless electroreflectance (CER) was utilized for the first time to investigate the built-in electric field in MXene/GaN structures with the goal of understanding the carrier transfer across the MXene/GaN interface. Five MXenes with high work functions were examined: CrC, MoC, VC, VC, and TiC.
View Article and Find Full Text PDFDiamonds possess exceptional properties such as high mechanical strength, thermal conductivity, and electrical resistance, making them suitable for various applications, including high-power electronics and optoelectronics. However, fabricating conductive structures in diamond remains a significant technological challenge. In this publication, we present a controlled process for fabricating precise amorphous conductive paths in a monocrystalline diamond using a focused ion beam (FIB) technique.
View Article and Find Full Text PDF