Electrical contacts are of the greatest importance as they decisively contribute to the overall performance of photoresistors. Undoped κ-GaO is an ideal material for photoresistors with high performance in the UV-C spectral region thanks to its intrinsic solar blindness and extremely low dark current. The quality assessment of the contact/κ-GaO interface is therefore of paramount importance.
View Article and Find Full Text PDFSemiconductor photodetectors can work only in specific material-dependent light wavelength ranges, connected with the bandgaps and absorption capabilities of the utilized semiconductors. This limitation has driven the development of hybrid devices that exceed the capabilities of individual materials. In this study, for the first time, a hybrid heterojunction photodetector based on methylammonium lead bromide (MAPbBr) polycrystalline film deposited on gallium arsenide (GaAs) was presented, along with comprehensive morphological, structural, optical, and photoelectrical investigations.
View Article and Find Full Text PDFUnderstanding protein function often necessitates characterizing the flexibility of protein structures. However, simulating protein flexibility poses significant challenges due to the complex dynamics of protein systems, requiring extensive computational resources and accurate modeling techniques. In response to these challenges, the CABS-flex method has been developed as an efficient modeling tool that combines coarse-grained simulations with all-atom detail.
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