Quantitative scanning near-field microwave microscopy for thin film dielectric constant measurement.

We combine a scanning near-field microwave microscope with an atomic force microscope for use in localized thin film dielectric constant measurement, and demonstrate the capabilities of our system through simultaneous surface topography and microwave reflection measurements on a variety of thin films grown on low resistivity silicon substrates. Reflection measurements clearly discriminate the interface between approximately 38 nm silicon nitride and dioxide thin films at 1.788 GHz.