Exploring time-resolved photoluminescence for nanowires using a three-dimensional computational transient model.

Time-resolved photoluminescence (TRPL) has been implemented experimentally to measure the carrier lifetime of semiconductors for decades. For the characterization of nanowires, the rich information embedded in TRPL curves has not been fully interpreted and meaningfully mapped to the respective material properties. This is because their three-dimensional (3-D) geometries result in more complicated mechanisms of carrier recombination than those in thin films and analytical solutions cannot be found for those nanostructures.

Improved quantum dot stacking for intermediate band solar cells using strain compensation.

We use thin tensile-strained AlAs layers to manage compressive strain in stacked layers of InAs/AlAsSb quantum dots (QDs). The AlAs layers allow us to reduce residual strain in the QD stacks, suppressing strain-related defects. AlAs layers 2.

Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well.

Optical properties and carrier dynamics in type-II Ga(As)Sb/GaAs quantum dots (QDs) embedded in an InGaAs quantum well (QW) are reported. A large blueshift of the photoluminescence (PL) peak is observed with increased excitation densities. This blueshift is due to the Coulomb interaction between physically separated electrons and holes characteristic of the type-II band alignment, along with a band-filling effect of electrons in the QW.

Optical power limiting with photoinduced anisotropy of azobenzene films.

We study the power-limiting properties of photoanisotropic azobenzene films with low-power laser. The trans-cis photoisomerization and molecular reorientation of azobenzene molecules induced by polarized laser beams result in intensity-dependent anisotropic effects. Consequently, the transmittance of the input beam that passes through the film between two crossed polarizers becomes enhanced at low intensities and clamped at high intensities.