Characteristics of flexible and transparent EuO resistive switching memory at high bending condition.

The characteristics of ITO/EuO/ITO/PET transparent and flexible resistive switching memory are studied. The device exhibits superior characteristics such as device area-independent and forming-free resistive switching behavior with a resistance on/off ratio of 10, good retention of >10 s and high AC endurance of >10 cycles. The conduction mechanism of the high-resistance state is the Poole-Frenkel mechanism, while that of the low-resistance state is ohmic conduction.

Conductive bridge random access memory characteristics of SiCN based transparent device due to indium diffusion.

In this work, the transparent bipolar resistive switching characteristics of a SiCN-based ITO/SiCN/AZO structure due to In diffusion from ITO is studied. The SiCN based device is found to be 80% transparent in the visible wavelength region. This device, with AZO as both top and bottom electrodes, does not show any RRAM property due to deposition of the high quality O-free SiCN film.

Emission characteristics of self-assembled strained GeSn islands for sources in the optical communication region.

Self-assembled strained Ge Sn islands on Si (100) have been grown at a low temperature using molecular beam epitaxy. The in-built strain and fraction of Sn in the islands have been estimated using x-ray photoelectron spectroscopy and high resolution x-ray diffraction study of grown samples. No-phonon assisted transition in the optical communication wavelength range of 1.

Enhancement of photoluminescence intensity of erbium doped silica containing Ge nanocrystals: distance dependent interactions.

Photo-physical processes in Er-doped silica glass matrix containing Ge nanocrystals prepared by the sol-gel method are presented in this article. Strong photoluminescence at 1.54 μm, important for fiber optics telecommunication systems, is observed from the different sol-gel derived glasses at room temperature.

Electroluminescence from metal-insulator-semiconductor tunneling diodes using compressively strained Ge on Si0.5Ge0.5 virtual substrates.

Direct band gap optical transition in compressively strained Ge film is demonstrated for the first time under current injection through a metal-insulator-semiconductor diode structure. The compressively strained Ge layer is grown on the relaxed Si0.5Ge0.