Publications by authors named "Quentin Wilmart"

On-chip pump rejection filters are key building blocks in a variety of applications exploiting nonlinear phenomena, including Raman spectroscopy and photon-pair generation. Ultrahigh rejection has been achieved in the silicon technology by non-coherent cascading of modal-engineered Bragg filters. However, this concept cannot be directly applied to silicon nitride waveguides as the comparatively lower index contrast hampers the suppression of residual light propagating in the orthogonal polarization, limiting the achievable rejection.

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Silicon nitride (SiN) waveguides become an appealing choice to realize complex photonic integrated circuits for applications in telecom/datacom transceivers, sensing, and quantum information sciences. However, compared to high-index-contrast silicon-on-insulator platform, the index difference between the SiN waveguide core and its claddings is more moderate, which adversely affects the development of vertical grating-coupled optical interfaces. SiN grating couplers suffer from the reduced strength, therefore it is more challenging to radiate all the waveguide power out of the grating within a beam size that is comparable to the mode field diameter of standard optical fibers.

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Perfectly vertical grating couplers have various applications in optical I/O such as connector design, coupling to multicore optical fibers and multilayer silicon photonics. However, it is challenging to achieve perfectly vertical coupling without simultaneously increasing reflection. In this paper, we use the adjoint method as well as an adjoint-inspired methodology to design devices that can be fabricated using only a single-etch step in a c-Si 193 nm DUV immersion lithography process, while maintaining good coupling and low reflection.

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Article Synopsis
  • Silicon nitride-on-silicon bi-layer grating couplers were developed for O-band applications, utilizing an optimization procedure that adhered to design rules and was fabricated on a 200 mm wafer.
  • The couplers demonstrated strong performance, with a peak coupling efficiency of -2.2 dB and a 1-dB bandwidth of 72.9 nm measured in the initial device.
  • Across multiple chips on the wafer, the median peak coupling efficiency was -2.1 dB and the median 1-dB bandwidth was 70.8 nm, aligning well with simulation results.
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Article Synopsis
  • Cooling mechanisms in nanoelectronics, particularly in graphene, face challenges due to thermal exchanges primarily influenced by phonon scattering.
  • In high-mobility graphene on hexagonal boron nitride (hBN), remote phonons from the substrate play a significant role, altering the typical thermal dynamics.
  • The unique combination of Zener-Klein tunneling and hyperbolic phonon polariton cooling processes in hBN enables enhanced performance for graphene-based power and RF devices.
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