Publications by authors named "Qizhu Li"

Doping narrow-gap semiconductors is a well-established approach for designing efficient thermoelectric materials. Semiconducting half-Heusler (HH) and full-Heusler (FH) compounds have garnered significant interest within the thermoelectric field, yet the number of exceptional candidates remains relatively small. It is recently shown that the vacancy-filling approach is a viable strategy for expanding the Heusler family.

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To improve thermoelectric efficiency, various tactics have been employed with considerable success to decouple intertwined material attributes. However, the integration of magnetism, derived from the unique spin characteristic that other methods cannot replicate, has been comparatively underexplored and presents an ongoing intellectual challenge. A previous research has shown that vacancy-filling Heuslers offer a highly adaptable framework for modulating thermoelectric properties.

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Seeking new strategies to tune the intrinsic defect and optimize the thermoelectric performance via no or less use of external doped elements (i.e., plain optimization) is an important method to realize the sustainable development of thermoelectric materials.

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Cortical tissue injury is common in multiple sclerosis (MS) and associates with disability progression. We have previously shown that HLA-DRB1*15 genotype status associates with the extent of cortical inflammatory pathology. In the current study, we sought to examine the influence of HLA-DRB1*15 on relationships between inflammation and neurodegeneration in MS.

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Person re-identification (re-ID) has attracted much attention recently due to its great importance in video surveillance. In general, distance metrics used to identify two person images are expected to be robust under various appearance changes. However, our work observes the extreme vulnerability of existing distance metrics to adversarial examples, generated by simply adding human-imperceptible perturbations to person images.

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In this paper, a laterally coupled distributed feedback (LC-DFB) laser based on modulation p-doped multiple InAs/GaAs quantum dot (QD) structures has been fabricated. The device exhibits a high side-mode suppression ratio (SMSR) of > 47 dB and a high thermal stability of dλ/dT = 0.092 nm/K under continuous-wave (CW) operation, which is mainly attributed to the high material gain prepared by modulation p-doping and rapid thermal annealing (RTA) process, and the significantly reduced waveguide losses by shallow-etched gratings and its close proximity to the laser ridge feature in the LC-DFB laser.

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