Publications by authors named "Qixin Feng"

Article Synopsis
  • Phonon engineering at gigahertz frequencies supports applications like microwave acoustic filters and quantum transducers, while terahertz phonon engineering promises faster and higher bandwidth technologies.
  • Researchers demonstrated effective generation, detection, and manipulation of terahertz phonons using atomically thin materials, specifically few-layer graphene and monolayer WSe, within van der Waals heterostructures.
  • The study showcases high-quality terahertz phononic cavities and the ability of WSe embedded in hexagonal boron nitride to block terahertz phonon transmission, paving the way for advanced acoustic filters and thermal engineering techniques.
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Coupled two-dimensional electron-hole bilayers provide a unique platform to study strongly correlated Bose-Fermi mixtures in condensed matter. Electrons and holes in spatially separated layers can bind to form interlayer excitons, composite Bosons expected to support high-temperature exciton condensates. The interlayer excitons can also interact strongly with excess charge carriers when electron and hole densities are unequal.

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Pb-free perovskite material is considered to be a promising material utilized in next-generation X-ray detectors due to its high X-ray absorption coefficient, decent carrier transport properties, and relatively low toxicity. However, the pixelation of the perovskite material with an industry-level photolithography processing method remains challenging due to its poor structural stability. Herein, we use CsAgBiBr perovskite material as the prototype and investigate its interaction with photolithographic polar solvents.

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Electro-optic (EO) modulation is of interest to impart information onto an optical carrier. Inorganic crystals-most notably LiNbO and BaTiO-exhibit EO modulation and good stability, but are difficult to integrate with silicon photonic technology. Solution-processed organic EO materials are readily integrated but suffer from thermal degradation at the temperatures required in operating conditions for accelerated reliability studies.

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Single-crystal (SC) perovskite is currently a promising material due to its high quantum efficiency and long diffusion length. However, the reported perovskite photodetection range (<800 nm) and response time (>10 μs) are still limited. Here, to promote the development of perovskite-integrated optoelectronic devices, this work demonstrates wider photodetection range and shorter response time perovskite photodetector by integrating the SC CHNHPbBr (MAPbBr) perovskite on silicon (Si).

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