Programmable Interfacial Band Configuration in WS/BiOSe Heterojunctions.

van der Waals heterojunctions based on transition-metal dichalcogenides (TMDs) offer advanced strategies for manipulating light-emitting and light-harvesting behaviors. A crucial factor determining the light-material interaction is in the band alignment at the heterojunction interface, particularly the distinctions between type-I and type-II alignments. However, altering the band alignment from one type to another without changing the constituent materials is exceptionally difficult.

Continuous-Wave Pumped Perovskite Lasers with Device Area Below 1 µm.

Continuous-wave (CW) pumped lasers with device areas below 1 µm constitute a key step to meeting the energy efficiency requirement for on-chip optical communications. However, a debate about whether a sub-micrometer device size and low threshold can be simultaneously satisfied has persisted owing to insurmountable radiation losses when approaching the optical diffraction limit. Herein, a record-small CW optically pumped perovskite laser with a device area of 0.

Strong Exciton-Exciton Scattering of Exfoliated van der Waals InSe toward Efficient Continuous-Wave Near-Infrared P-Band Emission.

P-band emission is a superlinear low-coherence emission through exciton-exciton (X-X) scattering into photon-like states. It occurs without the prerequisites of population inversion or macroscopical coherence, rendering lower power consumption than the widely explored superlinear low-coherence emissions including superfluorescence, amplified spontaneous emission, and random lasing, and holds great potential for speckle-free imaging and interferometric sensing. However, competition processes including exciton dissociation and annihilation undermine its operation at room temperature and/or low excitation conditions.

Ultrafast Internal Exciton Dissociation through Edge States in MoS Nanosheets with Diffusion Blocking.

Edge states of two-dimensional transition-metal dichalcogenides (TMDCs) are crucial to quantum circuits and optoelectronics. However, their dynamics are pivotal but remain unclear due to the edge states being obscured by their bulk counterparts. Herein, we study the state-resolved transient absorption spectra of ball-milling-produced MoS nanosheets with 10 nm lateral size with highly exposed free edges.

All Optical Switching through Anistropic Gain of CsPbBr Single Crystal Microplatelet.

Perovskite micro/nanostructures have recently emerged as a highly attractive gain material for nanolasers. To explore their applications and further improve performance, it is essential to understand the optical gain and the anisotropic properties. Herein, we obtained high quality CsPbBr microplatelets (MP) with anisotropic orthorhombic phase.

Ultrafast Antisolvent Growth of Single-Crystalline CsPbCl Microcavity for Low-Threshold Room Temperature Blue Lasing.

All-inorganic perovskite CsPbCl has recently attracted considerable attention due to its great potentials for the development of high-efficiency, deep-blue optoelectronic devices. Particularly, single-crystalline CsPbCl planar microstructures provide good platforms for both fundamental studies and nanophotonics applications from lasers and detectors to amplifiers. In this study, we report an ultrafast antisolvent deposition route to fabricate single-crystalline CsPbCl microplatelets (MPs).

Room-temperature Near-infrared Excitonic Lasing from Mechanically Exfoliated InSe Microflake.

The development of chip-level near-infrared laser sources using two-dimensional semiconductors is imperative to maintain the architecture of van der Waals integrated optical interconnections. However, the established two-dimensional semiconductor lasers may have either the disadvantages of poor controllability of monolayered gain media, large optical losses on silicon, or complicated fabrication of external optical microcavities. This study demonstrates room-temperature near-infrared lasing from mechanically exfoliated γ-phase indium selenide (InSe) microflakes free from external optical microcavities at a center wavelength of ∼1030 nm.

Full-color enhanced second harmonic generation using rainbow trapping in ultrathin hyperbolic metamaterials.

Metasurfaces have provided a promising approach to enhance the nonlinearity at subwavelength scale, but usually suffer from a narrow bandwidth as imposed by sharp resonant features. Here, we counterintuitively report a broadband, enhanced second-harmonic generation, in nanopatterned hyperbolic metamaterials. The nanopatterning allows the direct access of the mode with large momentum, rendering the rainbow light trapping, i.

Halide Perovskite Semiconductor Lasers: Materials, Cavity Design, and Low Threshold.

Solution-processable semiconductor lasers have been a long-standing challenge for next-generation displays, light sources, and communication technologies. Metal halide perovskites, which combine the advantages of inorganic and organic semiconductors, have recently emerged not only as excellent candidates for solution-processable lasers but also as potential complementary gain materials for filling the "green gap" and supplement industrial nanolasers based on classic II-VI/III-V semiconductors. Numerous perovskite lasers have been developed successfully with superior performance in terms of cost-effectiveness, low threshold, high coherence, and multicolor tunability.

Role of the Exciton-Polariton in a Continuous-Wave Optically Pumped CsPbBr Perovskite Laser.

Lead halide perovskites have emerged as excellent optical gain materials for solution-processable and flexible lasers. Recently, continuous-wave (CW) optically driven lasing was established in perovskite crystals; however, the mechanism of low-threshold operation is still disputed. In this study, CW-pumped lasing from one-dimensional CsPbBr nanoribbons (NBs) with a threshold of ∼130 W cm is demonstrated, which can be ascribed to the large refractive index induced by the exciton-polariton (EP) effect.

Enhanced Optical Absorption and Slowed Light of Reduced-Dimensional CsPbBr Nanowire Crystal by Exciton-Polariton.

Metallic halide perovskites are promising for low-cost, low-consumption, flexible optoelectronic devices. However, research is lacking on light propagation and dielectric behaviors as fundamental properties for optoelectronic perovskite applications, particularly the mechanism supporting a strong light-matter interaction and the different properties of low-dimensional structures from their bulk counterparts. We use spatially resolved photoluminescence (SRPL) spectroscopy to explore light propagation and measure the refractive index of CsPbBr nanowires (NWs).

Controlled Growth and Thickness-Dependent Conduction-Type Transition of 2D Ferrimagnetic Cr S Semiconductors.

2D magnetic materials have attracted intense attention as ideal platforms for constructing multifunctional electronic and spintronic devices. However, most of the reported 2D magnetic materials are mainly achieved by the mechanical exfoliation route. The direct synthesis of such materials is still rarely reported, especially toward thickness-controlled synthesis down to the 2D limit.

Lasing from reduced dimensional perovskite microplatelets: Fabry-Pérot or whispering-gallery-mode?

Cesium lead bromide (CsPbBr) perovskite has attracted great attention recently for its potentials for next-generation green-color lasing devices owing to the relatively high structural stability and the high emission efficiency among the perovskite family. Herein, we explore the origins of cavity modes in CsPbBr microplatelets (MPs) lasers by using angle-resolved microphotoluminescence Fourier imaging technique, which is still controversial so far. In-plane Fabry-Pérot (F-P) mode lasing transition to whispering-gallery-mode (WGM) lasing is verified at room temperature, which mostly occurs in large MPs with edge length (L) over 13 μm.

Intercalation-Mediated Synthesis and Interfacial Coupling Effect Exploration of Unconventional Graphene/PtSe Vertical Heterostructures.

Vertical heterostructures formed by stacks of two-dimensional (2D) layered materials with disparate electronic properties have attracted tremendous attention for their versatile applications. The targeted fabrication of such vertical stacks with clean interfaces and a specific stacking sequence remains challenging. Herein, we design a two-step chemical vapor deposition route for the direct synthesis of unconventional graphene/PtSe vertical stacks (Gr/PtSe) on conductive Au foil substrates.

Vapor-Phase Incommensurate Heteroepitaxy of Oriented Single-Crystal CsPbBr on GaN: Toward Integrated Optoelectronic Applications.

Integrating metallic halide perovskites with established modern semiconductor technology is significant for promoting the development of application-level optoelectronic devices. To realize such devices, exploring the growth dynamics and interfacial carrier dynamics of perovskites deposited on the core materials of semiconductor technology is essential. Herein, we report the incommensurate heteroepitaxy of highly oriented single-crystal cesium lead bromide (CsPbBr) on -wurtzite GaN/sapphire substrates with atomically smooth surface and uniform rectangular shape by chemical vapor deposition.

Lasing from Mechanically Exfoliated 2D Homologous Ruddlesden-Popper Perovskite Engineered by Inorganic Layer Thickness.

2D Ruddlesden-Popper perovskites (RPPs) have aroused growing attention in light harvesting and emission applications owing to their high environmental stability. Recently, coherent light emission of RPPs was reported, however mostly from inhomologous thin films that involve cascade intercompositional energy transfer. Lasing and fundamental understanding of intrinsic laser dynamics in homologous RPPs free from intercompositional energy transfer is still inadequate.

Charge-Transfer-Induced Photoluminescence Properties of WSe Monolayer-Bilayer Homojunction.

The charge-transfer process in transition-metal dichalcogenides (TMDCs) lateral homojunction affects the electron-hole recombination process of in optoelectronic devices. However, the optical properties of the homojunction reflecting the charge-transfer process has not been observed and studied. In this work, we investigated the charge-transfer-induced emission properties based on monolayer (1L)-bilayer (2L) WSe lateral homojunction with dozens of nanometer monolayer region.

Unambiguous Identification of Carbon Location on the N Site in Semi-insulating GaN.

Carbon (C) doping is essential for producing semi-insulating GaN for power electronics. However, to date the nature of C doped GaN, especially the lattice site occupation, is not yet well understood. In this work, we clarify the lattice site of C in GaN using polarized Fourier-transform infrared and Raman spectroscopies, in combination with first-principles calculations.