Publications by authors named "Qinxing Huang"
Article Synopsis
- Germanium/silicon (Ge/Si) avalanche photodiodes (APDs) are important for near-infrared detection and quantum communication, but most research has focused on just one optical communication band.
- This study introduces a lateral separate absorption multiplication (SAM) APD and looks at its performance across different wavelengths, finding that it performs significantly better at L-band (1600 nm) than at C-band (1550 nm).
- The research shows a gain-bandwidth product of 279 GHz, revealing insights into why higher gains occur and suggesting that Ge/Si APDs could play a bigger role in optical communication technology.
In this work, GeSn lateral p-i-n photodetectors (PDs) on insulator were fabricated with an active GeSn layer grown by the rapid melting growth (RMG) method. Taking advantages of the defect-free GeSn strips, GeSn PDs with 5.3 Sn content have low dark current and high responsivities, which are about 0.
View Article and Find Full Text PDFIn this work, high-performance GeSn photodetectors with a Sn content gradient GeSn layer were fabricated on SOI substrate by CMOS-compatible process for C and L band telecommunication. The active GeSn layer has a Sn component increased from 9 to 10.7% with the controlled relaxation degree up to 84%.
View Article and Find Full Text PDFIn this paper, a carrier-injection electro-absorption modulator (EAM) at 2 µm is demonstrated on Ge-on-Si platform. The EAM shows a compact size and high modulation efficiency due to the strong free-carrier electroabsorption (FCEA) effect in Ge. A modulation depth of 40 dB can be obtained under the injection current of only 420 mA.
View Article and Find Full Text PDF