High-Performance Anodic Vulcanization-Pretreated Gated P-π-M-N InAs/GaSb Superlattice Long-Wavelength Infrared Detector.

The InAs/GaSb superlattice infrared detector has been developed with tremendous effort. However, the performance of it, especially long-wavelength infrared detectors (LWIR), is still limited by the electrical performance and optical quantum efficiency (QE). Forcing the active region to be p-type through proper doping can highly improve QE, and the gating technique can be employed to greatly enhance electrical performance.