In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO Thin Films.

With the formation of mesa-like cells at their surfaces, LiNbO thin films are useful for integrating high-density domain wall memory. However, the material is too hard and inert to etch the cells with inclined side edges that help to diminish polarization retention. Moreover, etching could damage the ferroelectricity of the film.