Two-dimensional (2D) metallic TaSe and semiconducting WSe materials have been successfully fabricated in experiments and are considered as promising contact and channel materials, respectively, for the design of next-generation electronic devices. Herein, we design a metal-semiconductor (M-S) heterostructure combining metallic TaSe and semiconducting WSe materials and investigate the atomic structure, electronic properties and controllable contact types of the combined TaSe/WSe M-S heterostructure using first-principles calculations. Our results reveal that the TaSe/WSe M-S heterostructure can adopt four different stable stacking configurations, all of which exhibit enhanced elastic constants compared to the constituent monolayers.
View Article and Find Full Text PDFBackground Coronavirus disease 2019 (COVID-19) is still ongoing with the omicron variant. Low-cost, effective treatments are still needed, particularly in low-to-middle-income countries. This study assessed the safety and efficacy of TD0068, an herbal medicine developed from mainly garlic, for patients with non-severe COVID-19.
View Article and Find Full Text PDFIn this work, we propose novel two-dimensional Janus XCrSiN (X = S, Se, and Te) single-layers and comprehensively investigate their crystal structure, electronic properties, and carrier mobility by using a first-principles method. These configurations are the combination of the CrSiN material and a transition metal dichalcogenide. The X-Cr-SiN single-layers are constructed by replacing the N-Si-N atomic layer on one side with chalcogen atoms (S, Se, or Te).
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