A Thin-Film Pinned-Photodiode Imager Pixel with Fully Monolithic Fabrication and beyond 1Me- Full Well Capacity.

Thin-film photodiodes (TFPD) monolithically integrated on the Si Read-Out Integrated Circuitry (ROIC) are promising imaging platforms when beyond-silicon optoelectronic properties are required. Although TFPD device performance has improved significantly, the pixel development has been limited in terms of noise characteristics compared to the Si-based image sensors. Here, a thin-film-based pinned photodiode (TF-PPD) structure is presented, showing reduced kTC noise and dark current, accompanied with a high conversion gain (CG).

Photonic metamaterial with a subwavelength electrode pattern.

The next generation of tunable photonics requires highly conductive and light inert interconnects that enable fast switching of phase, amplitude, and polarization modulators without reducing their efficiency. As such, metallic electrodes should be avoided, as they introduce significant parasitic losses. Transparent conductive oxides, on the other hand, offer reduced absorption due to their high bandgap and good conductivity due to their relatively high carrier concentration.

Single-crystal nanopyramidal BGaN by nanoselective area growth on AlN/Si(111) and GaN templates.

We report nano-selective area growth (NSAG) of BGaN by MOCVD on AlN/Si(111) and GaN templates resulting in 150 nm single crystalline nanopyramids. This is in contrast to unmasked or micro-selective area growth, which results in a multi-crystalline structure on both substrates. Various characterization techniques were used to evaluate NSAG as a viable technique to improve BGaN material quality on AlN/Si(111) using results of GaN NSAG and unmasked BGaN growth for comparison.