Ultrafast Switching Speed Demonstrated in Wafer-Scale Integration of Crystalline Undoped HfO-Based Ferroelectrics.

Hafnium oxide-based ferroelectric materials have been researched extensively for high-speed, low-power nonvolatile memory devices. However, doping HfO through atomic layer deposition (ALD) cycles primarily aims to enhance specific properties but also introduces challenges in balancing performance and reliability. Therefore, understanding the properties of intrinsic crystalline HfO-based ferroelectric materials and developing undoped HfO ferroelectric devices with exceptional comprehensive properties are crucial.