New avenues for residual stress analysis in ultrathin atomic layer deposited free-standing membranes through release of micro-cantilevers.

The fabrication of thinnest, yet undeformed membrane structures with nanometer resolution is a prerequisite for a variety of Microelectromechanical systems (MEMS). However, functionally relevant thin films are susceptible to growth-generated stress. To tune the performance and reach large aspect ratios, knowledge of the intrinsic material properties is indispensable.

ALD HfO Films for Defining Microelectrodes for Electrochemical Sensing and Other Applications.

Microelectrodes are used in a wide range of applications from analytical electrochemistry and biomolecular sensing to in vivo implants. While a variety of insulating materials have been used to define the microelectrode active area, most are not suitable for nanoscale electrodes (<1 μm) due to the limited robustness of these films when the film thickness is on the order of the nanoelectrode dimension. In this study, we investigate atomic layer deposited hafnium dioxide (ALD HfO) as an insulating film to coat planar platinum microelectrodes, with the active areas being defined where the HfO is etched.

Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition.

The ability to deposit thin and conformal films has become of great importance because of downscaling of devices. However, because of nucleation difficulty, depositing an electrically stable and thin conformal platinum film on an oxide nucleation layer has proven challenging. By using plasma-enhanced atomic layer deposition (PEALD) and TiO as a nucleation layer, we achieved electrically continuous PEALD platinum films down to a thickness of 3.

Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid.

The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposited (ALD) of hydrofluoric acid (HF) etch resistant and electrically insulating films for sidewall spacer processing. Silicon nitride (SiN) has been the prototypical material for this need and extensive work has been conducted into realizing sufficiently lower wet etch rates (WERs) as well as leakage currents to meet industry needs. In this work, we report on the development of plasma-enhanced atomic layer deposition (PEALD) composites of SiN and AlN to minimize WER and leakage current density.

Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops.

Specimen preparation remains a practical challenge in transmission electron microscopy and frequently limits the quality of structural and chemical characterization data obtained. Prevailing methods for thinning of specimens to electron transparency are serial in nature, time consuming, and prone to producing artifacts and specimen failure. This work presents an alternative method for the preparation of plan-view specimens using isotropic vapor-phase etching with integrated etch stops.

Engineering Ultra-Low Work Function of Graphene.

Low work function materials are critical for energy conversion and electron emission applications. Here, we demonstrate for the first time that an ultralow work function graphene is achieved by combining electrostatic gating with a Cs/O surface coating. A simple device is built from large-area monolayer graphene grown by chemical vapor deposition, transferred onto 20 nm HfO2 on Si, enabling high electric fields capacitive charge accumulation in the graphene.

High-density waveguide superlattices with low crosstalk.

Silicon photonics holds great promise for low-cost large-scale photonic integration. In its future development, integration density will play an ever-increasing role in a way similar to that witnessed in integrated circuits. Waveguides are perhaps the most ubiquitous component in silicon photonics.

Enhanced Step Coverage of TiO₂ Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition.

Plasma-enhanced atomic layer deposition (PEALD) provides multiple benefits compared to thermal ALD including lower possible process temperature and a wider palette of possible materials. However, coverage of high aspect ratio (AR) structures is limited due to the recombination rates of the radical plasma species. We study the limits of conformality in 1:30 AR structures for TiO2 based on tetrakis(dimethylamido)titanium (TDMA-Ti) and O2 plasma through variation in plasma exposure and substrate temperature.

Depletion of cells and abundant proteins from biological samples by enhanced dielectrophoresis.

Platforms that are sensitive and specific enough to assay low-abundance protein biomarkers, in a high throughput multiplex format, within a complex biological fluid specimen, are necessary to enable protein biomarker based diagnostics for diseases such as cancer. The signal from an assay for a low-abundance protein biomarker in a biological fluid sample like blood is typically buried in a background that arises from the presence of blood cells and from high-abundance proteins that make up 90% of the assayed protein mass. We present an automated on-chip platform for the depletion of cells and highly abundant serum proteins in blood.

Photonic crystal cavities in cubic (3C) polytype silicon carbide films.

We present the design, fabrication, and characterization of high quality factor (Q ~10(3)) and small mode volume (V ~0.75 (λ/n)(3)) planar photonic crystal cavities from cubic (3C) thin films (thickness ~200 nm) of silicon carbide (SiC) grown epitaxially on a silicon substrate. We demonstrate cavity resonances across the telecommunications band, with wavelengths from 1.

Single-cell photonic nanocavity probes.

In this report, we demonstrate for the first time photonic nanocavities operating inside single biological cells. Here we develop a nanobeam photonic crystal (PC) cavity as an advanced cellular nanoprobe, active in nature, and configurable to provide a multitude of actions for both intracellular sensing and control. Our semiconductor nanocavity probes emit photoluminescence (PL) from embedded quantum dots (QD) and sustain high quality resonant photonic modes inside cells.

Control of DNA capture by nanofluidic transistors.

We report the use of an array of electrically gated ~200 nm solid-state pores as nanofluidic transistors to manipulate the capture and passage of DNA. The devices are capable of reversibly altering the rate of DNA capture by over 3 orders of magnitude using sub-1 V biasing of a gate electrode. This efficient gating originates from the counter-balance of electrophoresis and electroosmosis, as revealed by quantitative numerical simulations.

Electrical and thermal conduction in atomic layer deposition nanobridges down to 7 nm thickness.

While the literature is rich with data for the electrical behavior of nanotransistors based on semiconductor nanowires and carbon nanotubes, few data are available for ultrascaled metal interconnects that will be demanded by these devices. Atomic layer deposition (ALD), which uses a sequence of self-limiting surface reactions to achieve high-quality nanolayers, provides an unique opportunity to study the limits of electrical and thermal conduction in metal interconnects. This work measures and interprets the electrical and thermal conductivities of free-standing platinum films of thickness 7.

Linear increases in carbon nanotube density through multiple transfer technique.

We present a technique to increase carbon nanotube (CNT) density beyond the as-grown CNT density. We perform multiple transfers, whereby we transfer CNTs from several growth wafers onto the same target surface, thereby linearly increasing CNT density on the target substrate. This process, called transfer of nanotubes through multiple sacrificial layers, is highly scalable, and we demonstrate linear CNT density scaling up to 5 transfers.