Uncovering Atomic Migrations Behind Magnetic Tunnel Junction Breakdown.

As advances in computing technology increase demand for efficient data storage solutions, spintronic magnetic tunnel junction (MTJ)-based magnetic random-access memory (MRAM) devices emerge as promising alternatives to traditional charge-based memory devices. Successful applications of such spintronic devices necessitate understanding not only their ideal working principles but also their breakdown mechanisms. Employing an in situ electrical biasing system, atomic-resolution scanning transmission electron microscopy (STEM) reveals two distinct breakdown mechanisms.

Experimental demonstration of magnetic tunnel junction-based computational random-access memory.

The conventional computing paradigm struggles to fulfill the rapidly growing demands from emerging applications, especially those for machine intelligence because much of the power and energy is consumed by constant data transfers between logic and memory modules. A new paradigm, called "computational random-access memory (CRAM)," has emerged to address this fundamental limitation. CRAM performs logic operations directly using the memory cells themselves, without having the data ever leave the memory.

Appropriate complementary feeding practice and associated factors among mothers of children aged 6-23 months in Bhimphedi rural municipality of Nepal.

Background: Appropriate complementary feeding plays a crucial role in the enhancement of child survival; and promotes healthy growth and development. Evidence has shown that appropriate complementary feeding is effective in preventing malnutrition and child mortality. Thus, the main objective of this study is to assess the prevalence of appropriate complementary feeding practice and associated factors among mothers of children aged 6-23 months.

Perpendicular magnetic anisotropy, tunneling magnetoresistance and spin-transfer torque effect in magnetic tunnel junctions with Nb layers.

Nb and its compounds are widely used in quantum computing due to their high superconducting transition temperatures and high critical fields. Devices that combine superconducting performance and spintronic non-volatility could deliver unique functionality. Here we report the study of magnetic tunnel junctions with Nb as the heavy metal layers.

Voltage-Controlled Antiferromagnetism in Magnetic Tunnel Junctions.

We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junctions that is related to the interfacial Fe(Co)O_{x} formed between the CoFeB electrodes and the MgO barrier. The unique combination of interfacial antiferromagnetism, giant tunneling magnetoresistance, and sharp switching of the perpendicularly magnetized CoFeB allows sensitive detection of the exchange bias. We find that the exchange bias field can be isothermally controlled by magnetic fields at low temperatures.

Sorption Kinetics on Open Carbon Nanohorn Aggregates: The Effect of Molecular Diameter.

We present the results of a study of the kinetics of adsorption on aggregates of open carbon nanohorns using argon and CF₄ sorbates. We measured the equilibration times for each value of the sorbent loading along eight adsorption isotherms (four isotherms for each sorbate species). We found that: the equilibration times decrease as the sorbent loading (and the equilibrium pressure of the coexisting gas) increases, for a given temperature; and, that, for a given value of the sorbent loading, the equilibration times decrease with increasing temperature.