On the kinetics of the removal of ligands from films of colloidal nanocrystals by plasmas.

This paper describes the kinetic limitations of etching ligands from colloidal nanocrystal assemblies (CNAs) by plasma processing. We measured the etching kinetics of ligands from a CNA model system (spherical ZrO nanocrystals, 2.5-3.

Large-Scale Synthesis of Colloidal Si Nanocrystals and Their Helium Plasma Processing into Spin-On, Carbon-Free Nanocrystalline Si Films.

This paper describes a simple approach to the large-scale synthesis of colloidal Si nanocrystals and their processing into spin-on carbon-free nanocrystalline Si films. The synthesized silicon nanoparticles are capped with decene, dispersed in hexane, and deposited on silicon substrates. The deposited films are exposed to nonoxidizing room-temperature He plasma to remove the organic ligands without adversely affecting the silicon nanoparticles to form crack-free thin films.

Calcination does not remove all carbon from colloidal nanocrystal assemblies.

Removing organics from hybrid nanostructures is a crucial step in many bottom-up materials fabrication approaches. It is usually assumed that calcination is an effective solution to this problem, especially for thin films. This assumption has led to its application in thousands of papers.