Efficacy and Safety of Bioresorbable Vascular Scaffold (BVS) - Absorb in Acute Myocardial Infarction - A 45 Month Follow Up Study.

Aim: Bioresorbable vascular scaffolds (BVS) over the years have emerged as a new treatment option in coronary revascularization. There is a limited data on the use of these novel devices in patients with acute myocardial infarction (AMI). The purpose of this study was to evaluate the safety feasibility and efficacy of BVS implantation in patients with AMI.

Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics.

We report ZnO TFTs using Al2O3/Ta2O5 bilayer gate dielectrics grown by atomic layer deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm(2) V(-1) s(-1), but increased to 13.

Indium-Free Fully Transparent Electronics Deposited Entirely by Atomic Layer Deposition.

Indium-free, fully transparent thin-film transistors are fabricated entirely by the atomic layer deposition technique on rigid and flexible substrates at a low temperature of 160 °C. The transistors show high saturation mobility, large switching ratio, and small subthreshold swing value. The inverters and ring oscillators show large gain value and small propagation delay time, indicating the potential of this process in transparent electronic devices.

Recent Developments in p-Type Oxide Semiconductor Materials and Devices.

The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides.

Low temperature processed complementary metal oxide semiconductor (CMOS) device by oxidation effect from capping layer.

In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190 °C in air, which is significantly lower than the temperature generally required to form tin dioxide.

Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layer.

We report, for the first time, the use of a single step deposition of semiconductor channel layer to simultaneously achieve both n- and p-type transport in transparent oxide thin film transistors (TFTs). This effect is achieved by controlling the concentration of hydroxyl groups (OH-groups) in the underlying gate dielectrics. The semiconducting tin oxide layer was deposited at room temperature, and the maximum device fabrication temperature was 350 °C.

Record mobility in transparent p-type tin monoxide films and devices by phase engineering.

Here, we report the fabrication of nanoscale (15 nm) fully transparent p-type SnO thin film transistors (TFT) at temperatures as low as 180 °C with record device performance. Specifically, by carefully controlling the process conditions, we have developed SnO thin films with a Hall mobility of 18.71 cm(2) V(-1) s(-1) and fabricated TFT devices with a linear field-effect mobility of 6.

Impact of soft annealing on the performance of solution-processed amorphous zinc tin oxide thin-film transistors.

It is demonstrated that soft annealing duration strongly affects the performance of solution-processed amorphous zinc tin oxide thin-film transistors. Prolonged soft annealing times are found to induce two important changes in the device: (i) a decrease in zinc tin oxide film thickness, and (ii) an increase in oxygen vacancy concentration. The devices prepared without soft annealing exhibited inferior transistor performances, in comparison to devices in which the active channel layer (zinc tin oxide) was subjected to soft annealing.

Solution-processable zinc oxide for the polymer solar cell based on P3HT:PCBM.

The device performance of polymer solar cells with zinc oxide (ZnO) nanoparticles inserted as an electron injection layer between the poly(3-hexylthiopene) (P3HT):phenyl-C60-butyric acid methyl ester (PCBM) active layer and the Al electrode was studied. The polymer solar cell consists of molybdenum-oxide (MoO3) as a hole injection layer, P3HT:PCBM bulk heterojunction as an active layer, and ZnO NPs as an electron injection layer. The ZnO layer was formed from a precursor solution on the top part of the P3HT:PCBM film (1:0.

Effect of cadmium arachidate layers on the growth of pentacene and the performance of pentacene-based thin film transistors.

The effect of cadmium arachidate (CdA) layers deposited by Langmuir-Blodgett technique on the growth of pentacene thin films and the performance of pentacene-based thin film transistors has been investigated. The hydrophobicity of the SiO2 gate dielectric surface was increased (surface energy reduced) with the deposition of CdA layers as a result of the presence of long hydrophobic alkyl chains attached to the cadmium atoms. The change in surface wetting properties of SiO2 strongly influenced the growth mechanism of pentacene thin films.