BaHfTiO Ceramics from Sol-Gel and Solid-State Processes: Application to the Modelling of Piezoelectric Energy Harvesters.

A typical piezoelectric energy harvester is a bimorph cantilever with two layers of piezoelectric material on both sides of a flexible substrate. Piezoelectric layers of lead-based materials, typically lead zirconate titanate, have been mainly used due to their outstanding piezoelectric properties. However, due to lead toxicity and environmental problems, there is a need to replace them with environmentally benign materials.

Control of ZnO nanowires growth in flexible perovskite solar cells: A mini-review.

Due to their excellent properties, Zinc oxide nanowires (ZnO NW) have been attractive and considered as a promising electron-transporting layer (ETL) in flexible Perovskite Solar Cells (FPSCs). Since the first report on ZnO NWs-based FPSCs giving 2.6 % power conversion efficiency (in 2013), great improvements have been made, allowing to reach up to∼15 % nowadays.

Assessing the electrical activity of individual ZnO nanowires thermally annealed in air.

ZnO nanowires (NWs) are very attractive for a wide range of nanotechnological applications owing to their tunable electron concentration structural and surface defect engineering. A 2D electrical profiling of these defects is necessary to understand their restructuring dynamics during engineering processes. Our work proposes the exploration of individual ZnO NWs, dispersed on a SiO/p-Si substrate without any embedding matrix, along their axial direction using scanning capacitance microscopy (SCM), which is a useful tool for 2D carrier profiling.

Low-Temperature Hydrothermal Growth of ZnO Nanowires on AZO Substrates for FACsPb(IBr) Perovskite Solar Cells.

Electron and hole transport layers (ETL and HTL) play an essential role in shaping the photovoltaic performance of perovskite solar cells. While compact metal oxide ETL have been largely explored in planar device architectures, aligned nanowires or nanorods remain highly relevant for efficient charge extraction and directional transport. In this study, we have systematically grown ZnO nanowires (ZnO NWs) over aluminum-doped zinc oxide (AZO) substrates using a low-temperature method, hydrothermal growth (HTG).

Fabrication of Piezoelectric ZnO Nanowires Energy Harvester on Flexible Substrate Coated with Various Seed Layer Structures.

Flexible piezoelectric nanogenerators (PENGs) are very attractive for mechanical energy harvesting due to their high potential for realizing self-powered sensors and low-power electronics. In this paper, a PENG that is based on zinc oxide (ZnO) nanowires (NWs) is fabricated on flexible and transparent Polydimethylsiloxane (PDMS) substrate. The ZnO NWs were deposited on two different seed layer structures, i.

Free carrier enhanced depletion in ZnO nanorods decorated with bimetallic AuPt nanoclusters.

The decoration of semiconductor nanostructures with small metallic clusters usually leads to an improvement of their properties in sensing or catalysis. Bimetallic cluster decoration typically is claimed to be even more effective. Here, we report a detailed investigation of the effects of Au, Pt or AuPt nanocluster decoration of ZnO nanorods on charge transport, photoluminescence and UV sensitivity.

A Comparative Study on the Effects of Au, ZnO and AZO Seed Layers on the Performance of ZnO Nanowire-Based Piezoelectric Nanogenerators.

In this study, different seed layers like gold (Au), zinc oxide (ZnO) and aluminum-doped ZnO (AZO) have been associated to ZnO nanowires (NWs) for the development of mechanical energy harvesters. ZnO NWs were grown by using a low temperature hydrothermal method. The morphological properties were investigated using Scanning Electron Microscopy (SEM) and the analysis of crystalline quality and growth orientation was studied using X-ray Diffraction (XRD).

Stability evaluation of ZnO nanosheet based source-gated transistors.

Semiconducting nanostructures are one of the potential candidates to accomplish low-temperature and solution-based device assembly processes for the fabrication of transistors that offer practical solutions toward realizing low-cost flexible electronics. Meanwhile, it has been shown that by introducing a contact barrier, in a specific transistor configuration, stable device operation can be achieved at much reduced power consumption. In this work, we investigate both one-dimensional ZnO nanowires (NWs) and two-dimensional nanosheets (NSs) for high performance and stable nano-transistors on conventional Si/SiO substrates.

Photoluminescence Study of the Influence of Additive Ammonium Hydroxide in Hydrothermally Grown ZnO Nanowires.

We report the influence of ammonium hydroxide (NHOH), as growth additive, on zinc oxide nanomaterial through the optical response obtained by photoluminescence (PL). A low-temperature hydrothermal process is employed for the growth of ZnO nanowires (NWs) on seedless Au surface. A more than two order of magnitude change in ZnO NW density is demonstrated via careful addition of NHOH in the growth solution.

A facile hydrothermal approach for the density tunable growth of ZnO nanowires and their electrical characterizations.

Controlling properties of one-dimensional (1D) semiconducting nanostructures is essential for the advancement of electronic devices. In this work, we present a low-temperature hydrothermal growth process enabling density control of aligned high aspect ratio ZnO nanowires (NWs) on seedless Au surface. A two order of magnitude change in ZnO NW density is demonstrated via careful control of the ammonium hydroxide concentration (NHOH) in the solution.

Flexible Organic/Inorganic Hybrid Field-Effect Transistors with High Performance and Operational Stability.

The production of high-quality semiconducting nanostructures with optimized electrical, optical, and electromechanical properties is important for the advancement of next-generation technologies. In this context, we herein report on highly obliquely aligned single-crystalline zinc oxide nanosheets (ZnO NSs) grown via the vapor-liquid-solid approach using r-plane (01-12) sapphire as the template surface. The high structural and optical quality of as-grown ZnO NSs has been confirmed using high-resolution transmission electron microscopy and temperature-dependent photoluminescence, respectively.

Single-crystalline ZnO sheet Source-Gated Transistors.

Due to their fabrication simplicity, fully compatible with low-cost large-area device assembly strategies, source-gated transistors (SGTs) have received significant research attention in the area of high-performance electronics over large area low-cost substrates. While usually based on either amorphous or polycrystalline silicon (α-Si and poly-Si, respectively) thin-film technologies, the present work demonstrate the assembly of SGTs based on single-crystalline ZnO sheet (ZS) with asymmetric ohmic drain and Schottky source contacts. Electrical transport studies of the fabricated devices show excellent field-effect transport behaviour with abrupt drain current saturation (IDS(SAT)) at low drain voltages well below 2 V, even at very large gate voltages.

Fabrication of high performance field-effect transistors and practical Schottky contacts using hydrothermal ZnO nanowires.

The production of large quantities of single crystalline semiconducting ZnO nanowires (NWs) at low cost can offer practical solutions to realizing several novel electronic/optoelectronic and sensor applications on an industrial scale. The present work demonstrates high-density single crystalline NWs synthesized by a multiple cycle hydrothermal process at ∼100 °C. The high carrier concentration in such ZnO NWs is greatly suppressed by a simple low cost thermal annealing step in ambient air at ∼450 °C.

A comparison of 1D analytical model and 3D finite element analysis with experiments for a rosen-type piezoelectric transformer.

This article is dedicated to the study of Piezoelectric Transformers (PTs), which offer promising solutions to the increasing need for integrated power electronics modules within autonomous systems. The advantages offered by such transformers include: immunity to electromagnetic disturbances; ease of miniaturisation for example, using conventional micro fabrication processes; and enhanced performance in terms of voltage gain and power efficiency. Central to the adequate description of such transformers is the need for complex analytical modeling tools, especially if one is attempting to include combined contributions due to (i) mechanical phenomena owing to the different propagation modes which differ at the primary and secondary sides of the PT; and (ii) electrical phenomena such as the voltage gain and power efficiency, which depend on the electrical load.

Controlled growth of 1D and 2D ZnO nanostructures on 4H-SiC using Au catalyst.

A perfect control of nanostructure growth is a prerequisite for the development of electronic and optoelectronic device/systems. In this article, we demonstrate the growth of various ZnO-derived nanostructures, including well-ordered arrays of high aspect ratio single crystalline nanowires with preferred growth direction along the [0001] axis, nanowalls, and hybrid nanowire-nanowall structures. The growths of the various ZnO nanostructures have been carried out on SiC substrates in a horizontal furnace, using Au thin film as catalyst.