Surface conduction and reduced electrical resistivity in ultrathin noncrystalline NbP semimetal.

The electrical resistivity of conventional metals such as copper is known to increase in thin films as a result of electron-surface scattering, thus limiting the performance of metals in nanoscale electronics. Here, we find an unusual reduction of resistivity with decreasing film thickness in niobium phosphide (NbP) semimetal deposited at relatively low temperatures of 400°C. In films thinner than 5 nanometers, the room temperature resistivity (~34 microhm centimeters for 1.

Digital Twin Types and Applications in Healthcare.

Digital Twins, represents an innovative approach consisting of real-time digital replicas of physical entities. This innovative concept has already many applications in Industry, automotive, business environment and is also transforming the healthcare industry. Digital Twins have the potential to provide comprehensive models of individual patients, hospital facilities, and medical processes, integrating data from various sources such as electronic health records, wearable devices, and imaging systems.

Thermal Characterization of Ultrathin MgO Tunnel Barriers.

Magnetic tunnel junctions (MTJs) with ultrathin MgO tunnel barriers are at the heart of magnetic random-access memory (MRAM) and exhibit potential for spin caloritronics applications due to the tunnel magneto-Seebeck effect. However, the high programming current in MRAM can cause substantial heating which degrades the endurance and reliability of MTJs. Here, we report the thermal characterization of ultrathin CoFeB/MgO multilayers with total thicknesses of 4.

Axon-like active signal transmission.

Any electrical signal propagating in a metallic conductor loses amplitude due to the natural resistance of the metal. Compensating for such losses presently requires repeatedly breaking the conductor and interposing amplifiers that consume and regenerate the signal. This century-old primitive severely constrains the design and performance of modern interconnect-dense chips.

Chemically Tailored Growth of 2D Semiconductors via Hybrid Metal-Organic Chemical Vapor Deposition.

Two-dimensional (2D) semiconducting transition-metal dichalcogenides (TMDCs) are an exciting platform for excitonic physics and next-generation electronics, creating a strong demand to understand their growth, doping, and heterostructures. Despite significant progress in solid-source (SS-) and metal-organic chemical vapor deposition (MOCVD), further optimization is necessary to grow highly crystalline 2D TMDCs with controlled doping. Here, we report a hybrid MOCVD growth method that combines liquid-phase metal precursor deposition and vapor-phase organo-chalcogen delivery to leverage the advantages of both MOCVD and SS-CVD.

Biaxial Strain Transfer in Monolayer MoS and WSe Transistor Structures.

Monolayer transition metal dichalcogenides are intensely explored as active materials in 2D material-based devices due to their potential to overcome device size limitations, sub-nanometric thickness, and robust mechanical properties. Considering their large band gap sensitivity to mechanical strain, single-layered TMDs are well-suited for strain-engineered devices. While the impact of various types of mechanical strain on the properties of a variety of TMDs has been studied in the past, TMD-based devices have rarely been studied under mechanical deformations, with uniaxial strain being the most common one.

Inside the Hospitalization Voyage of Schizophrenia Care: A Single-Center Journey.

Schizophrenia poses significant challenges for individuals and caregivers, often leading to recurrent hospitalizations. Limited information on patients with schizophrenia and multiple hospitalizations in Romania is available in the scientific literature. Our study aimed to evaluate the characteristics of patients with schizophrenia with multiple hospitalizations in a single center in Cluj-Napoca, analyzing if specific patterns exist between patients with two or more hospitalizations or between men and women.

Toward Mass Production of Transition Metal Dichalcogenide Solar Cells: Scalable Growth of Photovoltaic-Grade Multilayer WSe by Tungsten Selenization.

Semiconducting transition metal dichalcogenides (TMDs) are promising for high-specific-power photovoltaics due to their desirable band gaps, high absorption coefficients, and ideally dangling-bond-free surfaces. Despite their potential, the majority of TMD solar cells to date are fabricated in a nonscalable fashion, with exfoliated materials, due to the lack of high-quality, large-area, multilayer TMDs. Here, we present the scalable, thickness-tunable synthesis of multilayer WSe films by selenizing prepatterned tungsten with either solid-source selenium at 900 °C or HSe precursors at 650 °C.

Direct Exfoliation of Nanoribbons from Bulk van der Waals Crystals.

Confinement of monolayers into quasi-1D atomically thin nanoribbons could lead to novel quantum phenomena beyond those achieved in their bulk and monolayer counterparts. However, current experimental availability of nanoribbon species beyond graphene is limited to bottom-up synthesis or lithographic patterning. In this study, a versatile and direct approach is introduced to exfoliate bulk van der Waals crystals as nanoribbons.

Flexible Nanoscale Amorphous Oxide Transistors with a Gold-Assisted Transfer Method.

We present a new approach to achieve nanoscale transistors on ultrathin flexible substrates with conventional electron-beam lithography. Full devices are first fabricated on a gold sacrificial layer covering a rigid silicon substrate, and then coated with a polyimide film and released from the rigid substrate. This approach bypasses nanofabrication constraints on flexible substrates: (i) electron-beam surface charging, (ii) alignment inaccuracy due to the wavy substrate, and (iii) restricted thermal budgets.

Biaxial Tensile Strain Enhances Electron Mobility of Monolayer Transition Metal Dichalcogenides.

Strain engineering can modulate the properties of two-dimensional (2D) semiconductors for electronic and optoelectronic applications. Recent theory and experiments have found that uniaxial tensile strain can improve the electron mobility of monolayer MoS, a 2D semiconductor, but the effects of biaxial strain on charge transport are not well characterized in 2D semiconductors. Here, we use biaxial tensile strain on flexible substrates to probe electron transport in monolayer WS and MoS transistors.

Nonvolatile Phase-Only Transmissive Spatial Light Modulator with Electrical Addressability of Individual Pixels.

Active metasurfaces with tunable subwavelength-scale nanoscatterers are promising platforms for high-performance spatial light modulators (SLMs). Among the tuning methods, phase-change materials (PCMs) are attractive because of their nonvolatile, threshold-driven, and drastic optical modulation, rendering zero-static power, crosstalk immunity, and compact pixels. However, current electrically controlled PCM-based metasurfaces are limited to global amplitude modulation, which is insufficient for SLMs.

Naming Homo erectus: A review.

Following the discovery of hominin fossils at Trinil (Java, Indonesia) in 1891 and 1892, Eugène Dubois named a new species, now known as Homo erectus. Although the main historical events are well-known, there appears to be no consensus regarding two important aspects of the naming of the species, including what constitutes the original publication of the name, and what is the name-bearing type specimen. These issues are addressed in this paper with reference to original sources and the International Code of Zoological Nomenclature.

Novel nanocomposite-superlattices for low energy and high stability nanoscale phase-change memory.

Data-centric applications are pushing the limits of energy-efficiency in today's computing systems, including those based on phase-change memory (PCM). This technology must achieve low-power and stable operation at nanoscale dimensions to succeed in high-density memory arrays. Here we use a novel combination of phase-change material superlattices and nanocomposites (based on GeSbTe), to achieve record-low power density ≈ 5 MW/cm and ≈ 0.

High Thermal Conductivity of Submicrometer Aluminum Nitride Thin Films Sputter-Deposited at Low Temperature.

Aluminum nitride (AlN) is one of the few electrically insulating materials with excellent thermal conductivity, but high-quality films typically require exceedingly hot deposition temperatures (>1000 °C). For thermal management applications in dense or high-power integrated circuits, it is important to deposit heat spreaders at low temperatures (<500 °C), without affecting the underlying electronics. Here, we demonstrate 100 nm to 1.

Spatially-Resolved Thermometry of Filamentary Nanoscale Hot Spots in TiO Resistive Random Access Memories to Address Device Variability.

Resistive random access memories (RRAM), based on the formation and rupture of conductive nanoscale filaments, have attracted increased attention for application in neuromorphic and in-memory computing. However, this technology is, in part, limited by its variability, which originates from the stochastic formation and extreme heating of its nanoscale filaments. In this study, we used scanning thermal microscopy (SThM) to assess the effect of filament-induced heat spreading on the surface of metal oxide RRAMs with different device designs.

Area-Selective Atomic Layer Deposition for Resistive Random-Access Memory Devices.

Resistive random-access memory (RRAM) is a promising technology for data storage and neuromorphic computing; however, cycle-to-cycle and device-to-device variability limits its widespread adoption and high-volume manufacturability. Improving the structural accuracy of RRAM devices during fabrication can reduce these variabilities by minimizing the filamentary randomness within a device. Here, we studied area-selective atomic layer deposition (AS-ALD) of the HfO dielectric for the fabrication of RRAM devices with higher reliability and accuracy.

Imaging the electron charge density in monolayer MoS at the Ångstrom scale.

Four-dimensional scanning transmission electron microscopy (4D-STEM) has recently gained widespread attention for its ability to image atomic electric fields with sub-Ångstrom spatial resolution. These electric field maps represent the integrated effect of the nucleus, core electrons and valence electrons, and separating their contributions is non-trivial. In this paper, we utilized simultaneously acquired 4D-STEM center of mass (CoM) images and annular dark field (ADF) images to determine the projected electron charge density in monolayer MoS.

Probing the Melting Transitions in Phase-Change Superlattices via Thin Film Nanocalorimetry.

Phase-change superlattices with nanometer thin sublayers are promising for low-power phase-change memory (PCM) on rigid and flexible platforms. However, the thermodynamics of the phase transition in such nanoscale superlattices remain unexplored, especially at ultrafast scanning rates, which is crucial for our fundamental understanding of superlattice-based PCM. Here, we probe the phase transition of SbTe (ST)/GeSbTe (GST) superlattices using nanocalorimetry with a monolayer sensitivity (∼1 Å) and a fast scanning rate (10 K/s).

Ambipolar Thickness-Dependent Thermoelectric Measurements of WSe.

Thermoelectric materials can harvest electrical energy from temperature gradients, and could play a role as power supplies for sensors and other devices. Here, we characterize fundamental in-plane electrical and thermoelectric properties of layered WSe over a range of thicknesses, from 10 to 96 nm, between 300 and 400 K. The devices are electrostatically gated with an ion gel, enabling us to probe both electron and hole regimes over a large range of carrier densities.

Nanoscale temperature sensing of electronic devices with calibrated scanning thermal microscopy.

Heat dissipation threatens the performance and lifetime of many electronic devices. As the size of devices shrinks to the nanoscale, we require spatially and thermally resolved thermometry to observe their fine thermal features. Scanning thermal microscopy (SThM) has proven to be a versatile measurement tool for characterizing the temperature at the surface of devices with nanoscale resolution.

How Do Quantum Effects Influence the Capacitance and Carrier Density of Monolayer MoS Transistors?

When transistor gate insulators have nanometer-scale equivalent oxide thickness (EOT), the gate capacitance () becomes smaller than the oxide capacitance () due to the quantum capacitance and charge centroid capacitance of the channel. Here, we study the capacitance of monolayer MoS as a prototypical two-dimensional (2D) channel while considering spatial variations in the potential, charge density, and density of states. At 0.

Reconstructing the provenance of the hominin fossils from Trinil (Java, Indonesia) through an integrated analysis of the historical and recent excavations.

In the early 1890s at Trinil, Eugène Dubois found a hominin skullcap (Trinil 2) and femur (Trinil 3, Femur I), situated at the same level ca. 10-15 m apart. He interpreted them as representing one species, Pithecanthropus erectus (now Homo erectus) which he inferred to be a transitional form between apes and humans.

Energy Efficient Neuro-Inspired Phase-Change Memory Based on Ge Sb Te as a Novel Epitaxial Nanocomposite.

Phase-change memory (PCM) is a promising candidate for neuro-inspired, data-intensive artificial intelligence applications, which relies on the physical attributes of PCM materials including gradual change of resistance states and multilevel operation with low resistance drift. However, achieving these attributes simultaneously remains a fundamental challenge for PCM materials such as Ge Sb Te , the most commonly used material. Here bi-directional gradual resistance changes with ≈10× resistance window using low energy pulses are demonstrated in nanoscale PCM devices based on Ge Sb Te , a new phase-change nanocomposite material .