An insight in to microwave induced defects and its impact on nonlinear process in NiO nanostructures under femtosecond and continuous wave laser excitation.

This work demonstrates the impact of microwave (MW) irradiation on third-order nonlinear optical (NLO) processes in chemically deposited NiO nanostructure films. The optical nonlinearity of the NiO nanostructure films was studied using third-harmonic generation (THG) measurements in the pulsed femtosecond laser regime and the Z-scan technique in the continuous wave laser regime. In the ultrafast pulsed regime, THG measurements revealed a significant increase in the THG signal of MW-irradiated NiO nanostructures due to photoexcitation and relaxation processes, resulting from an enhancement in defect concentration.

Spectroscopic analysis of nanosized Zn(Ag, Ni)O systems and observation of superparamagnetism at low temperature.

To understand the impact of binary doping in ZnO, nanosized Zn(Ag, Ni)O systems were synthesized by the sol-gel method. The amount of Ag was fixed at 2 at%, and that of Ni was varied from 1 to 15 at%. Ni incorporation equal to or beyond 3 at% gave rise to the development of the NiO phase.

Evaluation of Zn: WO Thin Films as a Sensing Layer for Detection of NH Gas.

Pristine WO and Zn-doped WO were synthesized using the spray pyrolysis technique to detect ammonia gas. The prominent orientation of the crystallites along the (200) plane was evident from X-ray diffraction (XRD) studies. Scanning Electron Microscope (SEM) morphology indicated well-defined grains upon Zn doping with a smaller grain size of 62 nm for Zn-doped WO (Zn: WO) film.

Impact of Ag on the Limit of Detection towards NH-Sensing in Spray-Coated WO Thin-Films.

Ag-doped WO (Ag-WO) films were deposited on a soda-lime glass substrate via a facile spray pyrolysis technique. The surface roughness of the films varied between 0.6 nm and 4.

An 8 MeV Electron Beam Modified In:ZnO Thin Films for CO Gas Sensing towards Low Concentration.

In the present investigation, electron beam-influenced modifications on the CO gas sensing properties of indium doped ZnO (IZO) thin films were reported. Dose rates of 5, 10, and 15 kGy were irradiated to the IZO nano films while maintaining the In doping concentration to be 15 wt%. The wurtzite structure of IZO films is observed from XRD studies post electron beam irradiation, confirming structural stability, even in the intense radiation environment.

Defect engineering, microstructural examination and improvement of ultrafast third harmonic generation in GaZnO nanostructures: a study of e-beam irradiation.

Electron beam induced effects on defect engineering and structural, morphological and optical properties of Ga doped ZnO (GaZnO) nanostructures for improved ultrafast nonlinear optical properties are presented. A microstructural analysis was carried out based on the Scherrer, Williamson-Hall, and size-strain models. All three models reveal a peak broadening effect upon electron beam irradiation (EBI) and the crystallite size of the films shows a decrease of 30% compared to unirradiated nanostructures.