Publications by authors named "Poonyasiri Boonpeng"
Article Synopsis
- * Advanced techniques like X-ray diffraction, mass spectrometry, and electron microscopy were utilized to analyze the structure of the quantum wells.
- * Photoluminescence measurements revealed that rapid annealing at 650°C improved emission quality, but higher temperatures caused degradation and blue-shifting due to issues with non-radiative centers and bismuth movement.
In this paper, we have studied the fabrication of InP ringlike quantum-dot molecules on GaAs(001) substrate grown by solid-source molecular beam epitaxy using droplet epitaxy technique and the effect of In deposition rate on the physical and optical properties of InP ringlike quantum-dot molecules. The In deposition rate is varied from 0.2 ML/s to 0.
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