Thermal atomic layer deposition of InO thin films using a homoleptic indium triazenide precursor and water.

Indium oxide (InO) is an important transparent conducting material widely used in optoelectronic applications. Herein, we study the deposition of InO by thermal atomic layer deposition (ALD) using our recently reported indium(III) triazenide precursor and HO. A temperature interval with self-limiting growth was found between ∼270 and 385 °C with a growth per cycle of ∼1.

Solar-Driven Photoelectrochemical Performance of Novel ZnO/AgWO/AgBr Nanorods-Based Photoelectrodes.

Highly efficient photoelectrochemical (PEC) water oxidation under solar visible light is crucial for water splitting to produce hydrogen as a source of sustainable energy. Particularly, silver-based nanomaterials are important for PEC performance due to their surface plasmon resonance which can enhance the photoelectrochemical efficiency. However, the PEC of ZnO/AgWO/AgBr with enhanced visible-light water oxidation has not been studied so far.

Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Design.

A heteroleptic amidoalane precursor is presented as a more suitably designed candidate to replace trimethylaluminum (TMA) for atomic layer deposition of aluminum nitride (AlN). The lack of C-Al bonds and the strongly reducing hydride ligands in [AlH(NMe)] () were specifically chosen to limit impurities in target aluminum nitride (AlN) films. Compound is made in a high yield, scalable synthesis involving lithium aluminum hydride and dimethylammonium chloride.

Area Selective Deposition of Metals from the Electrical Resistivity of the Substrate.

Area selective deposition (ASD) of films only on desired areas of the substrate opens for less complex fabrication of nanoscaled electronics. We show that a newly developed CVD method, where plasma electrons are used as the reducing agent in deposition of metallic thin films, is inherently area selective from the electrical resistivity of the substrate surface. When depositing iron with the new CVD method, no film is deposited on high-resistivity SiO surfaces whereas several hundred nanometers thick iron films are deposited on areas with low resistivity, obtained by adding a thin layer of silver on the SiO surface.