Laser induced damage threshold of GaSe with antireflection microstructures at a wavelength of 5 µm.

Large GaSe crystals were grown and various antireflection microstructures (ARMs) were fabricated on their cleaved surfaces using optimized femtosecond laser ablation, which provided the antireflection effect in a wide wavelength range of 4-16 µm. The influence of ARMs created on the GaSe surface on the change of the laser-induced damage threshold (LIDT) of the crystal at a wavelength of 5 μm was evaluated. The 5-µm Fe:ZnMgSe laser with the pulse duration of 135 ns was used for the LIDT test in conditions close to single pulse exposure.

Highly transient stimulated Raman scattering in SrMoO under ultrafast laser pumping with a controllable chirp.

For the first time, to the best of our knowledge, we demonstrate highly transient, multiwavelength, single-pass Raman generation with combined frequency shifts on two Raman modes of an SrMoO crystal with high total Raman conversion efficiency of up to 48% in conditions of competition with self-phase modulation (SPM). A 58-mm-long SrMoO crystal was used as the active medium under pumping by the 1030-nm, 40-µJ laser pulses with controllable dispersive stretching in a range of 0.25-6 ps at negative and positive chirping.