UV light-emitting diodes grown on GaN templates with selective-area Si implantation.

This study demonstrates that selective-area Si implantation performed on the GaN templates instead of conventional dielectric layers, such as SiO or SiN, serves as the mask layer for the epitaxial lateral overgrowth (ELOG) process. Although the substantial mask layer is absent on the templates, selective growth initially occurs on the implantation-free area and then evolves a lateral overgrowth on the Si-implanted area during the regrowth process. This selective growth is attributed to that the crystal structure of the Si-implanted area subjected to the high doses of ion bombardment produces an amorphous surface layer, thereby leading to a lattice mismatch to the regrown GaN layer.

Light-emitting diodes with surface gallium nitride p-n homojunction structure formed by selective area regrowth.

In this study, the blue light-emitting diode (LED) structures based on gallium nitride (GaN) were presented. Each structure possessed a surface GaN p-n junction, which was formed through selective area regrowth on an InGaN/GaN multiple quantum well (MQW) structure and served as the carrier injector. The LEDs that showed efficient hole injection and current spreading were configured to form a p-type GaN layer between the MQW and regrown n-type GaN top layer.