Using Modified-Intake Plasma-Enhanced Metal-Organic Chemical Vapor Deposition System to Grow Gallium Doped Zinc Oxide.

We have used a modified-intake plasma-enhanced metal-organic chemical vapor deposition (MIPEMOCVD) system to fabricate gallium-doped zinc oxide (GZO) thin films with varied Ga content. The MIPEMOCVD system contains a modified intake system of a mixed tank and a spraying terminal to deliver the metal-organic (MO) precursors and a radio-frequency (RF) system parallel to the substrate normal, which can achieve a uniform distribution of organic precursors in the reaction chamber and reduce the bombardment damage. We examined the substitute and interstitial mechanisms of Ga atoms in zinc oxide (ZnO) matrix in MIPEMOCVD-grown GZO thin films through crystalline analyses and Hall measurements.

Investigation of Photonic-Crystal-Structured p-GaN Nanorods Fabricated by Polystyrene Nanosphere Lithography Method to Improve the Light Extraction Efficiency of InGaN/GaN Green Light-Emitting Diodes.

We fabricated the photonic-crystal-structured p-GaN (PC-structured p-GaN) nanorods using the modified polystyrene nanosphere (PS NS) lithography method for InGaN/GaN green light-emitting diodes (LEDs) to enhance the light extraction efficiency (LEE). A modified PS NS lithography method including two-times spin-coating processes and the post-spin-coating heating treatment was used to obtain a self-assembly close-packed PS NS array of monolayer as a mask and then a partially dry etching process was applied to PS NS, SiO, and p-GaN to form PC-structured p-GaN nanorods on the InGaN/GaN green LEDs. The light output intensity and LEE of InGaN/GaN green LEDs with the PC-structured p-GaN nanorods depend on the period, diameter, and height of PC-structured p-GaN nanorods.

Enhancement of Light Extraction Efficiency for InGaN/GaN Light-Emitting Diodes Using Silver Nanoparticle Embedded ZnO Thin Films.

In this study, we propose a liquid-phase-deposited silver nanoparticle embedded ZnO (LPD-Ag NP/ZnO) thin film at room temperature to improve the light extraction efficiency (LEE) for InGaN/GaN light-emitting diodes (LEDs). The treatment solution for the deposition of the LPD-Ag/NP ZnO thin film comprised a ZnO-powder-saturated HCl and a silver nitrate (AgNO₃) aqueous solution. The enhanced LEE of an InGaN/GaN LED with the LPD-Ag NP/ZnO window layer can be attributed to the surface texture and localized surface plasmon (LSP) coupling effect.

Using Spin-Coated Silver Nanoparticles/Zinc Oxide Thin Films to Improve the Efficiency of GaInP/(In)GaAs/Ge Solar Cells.

We synthesized a silver nanoparticle/zinc oxide (Ag NP/ZnO) thin film by using spin-coating technology. The treatment solution for Ag NP/ZnO thin film deposition contained zinc acetate (Zn(CH₃COO)₂), sodium hydroxide (NaOH), and silver nitrate (AgNO₃) aqueous solutions. The crystalline characteristics, surface morphology, content of elements, and reflectivity of the Ag NPs/ZnO thin film at various concentrations of the AgNO₃ aqueous solution were investigated using X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, atomic force microscopy, and ultraviolet⁻visible⁻near infrared spectrophotometry.

Preparation of a Periodic Polystyrene Nanosphere Array Using the Dip-Drop Method with Post-deposition Etching and Its Application of Improving Light Extraction Efficiency of InGaN/GaN LEDs.

In this study, we synthesized a periodic polystyrene nanosphere (PS NS) array using the dip-drop method with post-deposition etching to improve the light extraction efficiency (LEE) of InGaN/GaN light-emitting diodes (LEDs). The dip-drop method has advantages such as simple procedure, inexpensive equipment, room temperature deposition, and easy implementation in LEDs. The arrangement of PS NSs on an indium-tin-oxide (ITO)-coated glass substrate depends on the average dip-drop speed and the concentration of the PS NS suspension.

Copper-Zinc-Tin-Sulfur Thin Film Using Spin-Coating Technology.

Cu₂ZnSnS₄ (CZTS) thin films were deposited on glass substrates by using spin-coating and an annealing process, which can improve the crystallinity and morphology of the thin films. The grain size, optical gap, and atomic contents of copper (Cu), zinc (Zn), tin (Sn), and sulfur (S) in a CZTS thin film absorber relate to the concentrations of aqueous precursor solutions containing copper chloride (CuCl₂), zinc chloride (ZnCl₂), tin chloride (SnCl₂), and thiourea (SC(NH₂)₂), whereas the electrical properties of CZTS thin films depend on the annealing temperature and the atomic content ratios of Cu/(Zn + Sn) and Zn/Sn. All of the CZTS films were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDXS), Raman spectroscopy, and Hall measurements.