Space-qualifying silicon photonic modulators and circuits.

Reducing the form factor while retaining the radiation hardness and performance matrix is the goal of avionics. While a compromise between a transistor's size and its radiation hardness has reached consensus in microelectronics, the size-performance balance for their optical counterparts has not been quested but eventually will limit the spaceborne photonic instruments' capacity to weight ratio. Here, we performed space experiments of photonic integrated circuits (PICs), revealing the critical roles of energetic charged particles.

Experimental demonstration of a 4,294,967,296-QAM-based Y-00 quantum stream cipher template carrying 160-Gb/s 16-QAM signals.

We demonstrate a 4,294,967,296-quadrature amplitude modulation (QAM) based Y-00 quantum stream cipher system carrying a 160-Gb/s 16-QAM signal transmitted over 320-km SSMF. The ultra-dense QAM cipher template is realized by an integrated two-segment silicon photonics I/Q modulator.

Broadly and finely tunable hybrid silicon laser with nanosecond-scale switching speed.

We demonstrate a hybrid silicon tunable laser with wide tunability and rapid switching speed for applications in sensing and optical networks. By implementing an optimized carrier injection phase shifter design, the filters of the silicon laser cavity may be efficiently controlled, enabling both fine and broad wavelength tuning across a 56 nm range, in addition to a rapid 10 ns switching time. The laser emits up to 10 dBm output power, and the linewidth is near 200 kHz.

Inter-polarization mixers for coherent detection of optical signals.

Electro-magnetic (EM) mixers are fundamental building blocks in communication systems. They are used in frequency/wavelength filters, interferometric modulators, amplitude-phase receivers, to name a few. Traditional EM mixers have two or more input ports and work only for co-polarized signal and local-oscillator (LO) incident on its inputs.

Simultaneous four-channel thermal adaptation of polarization insensitive silicon photonics WDM receiver.

We propose a novel approach to demonstrate simultaneous multi-wavelength locking during temperature changes in a silicon photonic polarization insensitive microring-based wavelength division multiplexing (WDM) receiver. The DC component of a single monitoring photodetector at the through port of the microring filter array is exploited as a feedback signal with no additional power consumption. This feedback signal is used in control circuitry to properly tune the microring filters using ohmic heating, thus creating a feedback loop for thermal adaptation.

Simultaneous wavelength locking of microring modulator array with a single monitoring signal.

A microring modulator array coupled to a common bus waveguide can be used to construct low power, compact and flexible wavelength-division-multiplexing (WDM) transmitters. However, due to extremely small working bandwidths of the rings, it is challenging to find the right resonant wavelength setting and locking the resonance to an external laser. In the paper, we propose a novel technique enabling simultaneous wavelength locking of a microring modulator array with a single monitor, together with automatically optimizing the wavelength setting.

Coplanar-waveguide-based silicon Mach-Zehnder modulator using a meandering optical waveguide and alternating-side PN junction loading.

We demonstrate a silicon Mach-Zehnder modulator with a coplanar waveguide transmission-line electrode structure using a meandering optical waveguide and alternating-side PN junction loading of the electrodes, which helps suppress the signal distortion caused by the parasitic slot-line mode and improves the electro-optic (EO) bandwidth. The silicon MZM exhibits a π-phase-shift voltage (V) of 4.5 V with an EO 3 dB bandwidth of ∼20  GHz for a 5 mm long phase shifter.

128-Gb/s 100-km transmission with direct detection using silicon photonic Stokes vector receiver and I/Q modulator.

Recently, there is increasing interest in utilizing Stokes vector receiver, which is a direct-detection technique with the capability to digitally track the polarization changes in fibers and decode information in multiple dimensions. Here, we report a monolithically integrated silicon photonic Stokes vector receiver, which consists of one polarization beam splitter, two polarization rotators, one 90-degree optical hybrid, and six germanium photodetectors. Paired with a silicon in-phase/quadrature modulator incorporating a power-tunable carrier in the orthogonal polarization, transmission at 128-Gb/s over 100-km fiber is achieved with direct detection.

Observation of nonreciprocal transmission in binary phase-shift keying modulation using traveling-wave Mach-Zehnder modulators.

In coherent optical transmission, traveling-wave Mach-Zehnder modulators are commonly used to generate various advanced formats where the modulators are biased at the minimum transmission point. Here, we report that an optical isolation effect with lower backward transmission occurs under this condition. This concept is successfully demonstrated to achieve ∼7  dB isolation over a 90-nm wavelength span under binary phase-shift keying modulation using a commercial lithium niobate modulator.

High-power dual-fed traveling wave photodetector circuits in silicon photonics.

We introduce the concept of dual-illuminated photodetectors for high-power applications. Illuminating the photodetector on both sides doubles the number of optical channels, boosting DC and RF power handling capability. This concept is demonstrated utilizing multiple-stage dual-illuminated traveling wave photodetector circuits in silicon photonics, showing a maximum DC photocurrent of 112 mA and a 3-dB bandwidth of 40 GHz at 0.

Travelling-wave Mach-Zehnder modulators functioning as optical isolators.

On-chip optical isolators not requiring the use of magneto-optical materials has become a long-standing challenge in integrated optics. Here, we demonstrate that a traditional travelling-wave modulator can effectively function as an optical isolator, when driven under a prescribed modulation condition. By using an off-shelve lithium niobate modulator, we achieve more than 12.

Novel integration technique for silicon/III-V hybrid laser.

Integrated semiconductor lasers on silicon are one of the most crucial devices to enable low-cost silicon photonic integrated circuits for high-bandwidth optic communications and interconnects. While optical amplifiers and lasers are typically realized in III-V waveguide structures, it is beneficial to have an integration approach which allows flexible and efficient coupling of light between III-V gain media and silicon waveguides. In this paper, we propose and demonstrate a novel fabrication technique and associated transition structure to realize integrated lasers without the constraints of other critical processing parameters such as the starting silicon layer thicknesses.

Silicon optical modulator with shield coplanar waveguide electrodes.

A silicon Mach-Zehnder Interferometer (MZI) optical modulator with a shield coplanar waveguide (CPW) transmission line electrode design was demonstrated. This shield-CPW electrode suppresses the signal distortion caused by the parasitic slot-line (SL) mode and improves the electrical bandwidth and the electro-optical (EO) bandwidth. With the shield-CPW electrodes and 5.

Cascaded uncoupled dual-ring modulator.

We demonstrate, by coherent driving two uncoupled rings in same direction, that the effective photon circulating time in the dual-ring modulator is reduced, with increased modulation quality. The inter-ring detuning-dependent photon dynamics, Q factor, extinction ratio, and optical modulation amplitude of two cascaded silicon ring resonators are studied and compared with that of a single-ring modulator. Experimentally measured eye diagrams, together with coupled mode theory simulations, demonstrate the enhancement of the dual-ring configuration at 20 Gbps with a Q∼20,000.

Monolithic polarization diversity coherent receiver based on 120-degree optical hybrids on silicon.

We present a monolithic polarization diversity coherent receiver by employing 120-degree optical hybrids on a silicon photonic integrated circuit (PIC). This PIC monolithically integrates silicon inverse tapers for fiber coupling, silicon polarization splitters, germanium high-speed photo detectors, and 120-degree optical hybrids based on 3x3 multimode interferometers (MMI). We demonstrate that 112-Gb/s polarization-division-multiplexed quadrature phase-shift keyed signals are detected in the wavelength range of 1530-1580 nm with comparable performance to commercial receivers.

960-km SSMF transmission of 105.7-Gb/s PDM 3-PAM using directly modulated VCSELs and coherent detection.

We generate a 105.7-Gb/s signal by directly modulating a 1.5-µm VCSEL with a 33.

112-Gb/s monolithic PDM-QPSK modulator in silicon.

We present a monolithic dual-polarization quadrature phase-shift keying (QPSK) modulator based on a silicon photonic integrated circuit (PIC). This PIC consists of four high-speed silicon modulators, a polarization rotator, and a polarization beam combiner. A 112-Gb/s polarization-division-multiplexed (PDM) QPSK modulation is successfully demonstrated.

50-Gb/s silicon quadrature phase-shift keying modulator.

We report the first successful demonstration of quadrature phase-shift keying (QPSK) modulation using two nested silicon Mach-Zehnder modulators. 50-Gb/s QPSK signal is generated with only 2.7-dB optical signal-to-noise ratio penalties from the theoretical limit at a bit-error ratio of 10(-3).

Experimental demonstration of microring quadrature phase-shift keying modulators.

Advanced optical modulation formats are a key technology to increase the capacity of optical communication networks. Mach-Zehnder modulators are typically used to generate various modulation formats. Here, we report the first experimental demonstration of quadrature phase-shift keying (QPSK) modulation using compact microring modulators.

High-speed low-voltage single-drive push-pull silicon Mach-Zehnder modulators.

We demonstrate a single-drive push-pull silicon Mach-Zehnder modulator (MZM) with a π-phase-shift voltage of 3.1 V and speed up to 30 Gb/s. The on-chip insertion loss is 9 dB due to the use of a 6 mm-long phase shifter.

Monolithic silicon chip with 10 modulator channels at 25 Gbps and 100-GHz spacing.

We demonstrate a chip containing ten low-chirp silicon modulators, each operating at 25 Gbps, multiplexed by a SiN arrayed-waveguide grating with 100-GHz spacing, showing the potential for 250 Gbps aggregated capacity on a 5×8 mm(2) footprint.

36 GHz submicron silicon waveguide germanium photodetector.

We present two effective approaches to improve the responsivity of high speed waveguide-based Ge photodetectors integrated on a 0.25 μm silicon-on-insulator (SOI) platform. The main cause of poor responsivity is identified as metal absorption from the top contact to Ge.

Design and fabrication of 3μm silicon-on-insulator waveguide integrated Ge electro-absorption modulator.

We present the design and fabrication of a waveguide-based Ge electro-absorption (EA) modulator integrated with a 3 µm silicon-on-isolator (SOI) waveguide. The proposed Ge EA modulator employs a butt-coupled horizontally-oriented p-i-n structure. The optical design achieves a low-loss transition from Ge to Si waveguides.

30GHz Ge electro-absorption modulator integrated with 3 μm silicon-on-insulator waveguide.

We demonstrate a compact waveguide-based high-speed Ge electro-absorption (EA) modulator integrated with a single mode 3 µm silicon-on-isolator (SOI) waveguide. The Ge EA modulator is based on a horizontally-oriented p-i-n structure butt-coupled with a deep-etched silicon waveguide, which transitions adiabatically to a shallow-etched single mode large core SOI waveguide. The demonstrated device has a compact active region of 1.