A Scalable Optoelectronic Neural Probe Architecture With Self-Diagnostic Capability.

There is a growing demand for the development of new types of implantable optoelectronics to support both basic neuroscience and optogenetic treatments for neurological disorders. Target specification requirements include multi-site optical stimulation, programmable radiance profile, safe operation, and miniaturization. It is also preferable to have a simple serial interface rather than large numbers of control lines.

A head mounted device stimulator for optogenetic retinal prosthesis.

Objective: Our main objective is to demonstrate that compact high radiance gallium nitride displays can be used with conventional virtual reality optics to stimulate an optogenetic retina. Hence, we aim to introduce a non-invasive approach to restore vision for people with conditions such as retinitis pigmentosa where there is a remaining viable communication link between the retina and the visual cortex.

Approach: We design and implement the headset using a high-density µLED matrix, Raspberry Pi, microcontroller from NXP and virtual reality lens.

Opto-electro-thermal optimization of photonic probes for optogenetic neural stimulation.

Implantable photonic probes are of increasing interest to the field of biophotonics and in particular, optogenetic neural stimulation. Active probes with onboard light emissive elements allow for electronic multiplexing and can be manufactured through existing microelectronics methods. However, as the optogenetics field moves towards clinical practice, an important question arises as to whether such probes will cause excessive thermal heating of the surrounding tissue.

High Density, High Radiance $\mu$ LED Matrix for Optogenetic Retinal Prostheses and Planar Neural Stimulation.

Optical neuron stimulation arrays are important for both in-vitro biology and retinal prosthetic biomedical applications. Hence, in this work, we present an 8100 pixel high radiance photonic stimulator. The chip module vertically combines custom made gallium nitride μ LEDs with a CMOS application specific integrated circuit.

Low defect large area semi-polar (11[Formula: see text]2) GaN grown on patterned (113) silicon.

We report on the growth of semi-polar GaN (11[Formula: see text]2) templates on patterned Si (113) substrates. Trenches were etched in Si (113) using KOH to expose Si {111} sidewalls. Subsequently an AlN layer to prevent meltback etching, an AlGaN layer for stress management, and finally two GaN layers were deposited.

Fibre coupled micro-light emitting diode array light source with integrated band-pass filter for fluorescence detection in miniaturised analytical systems.

In this work, a new type of miniaturized fibre-coupled solid-state light source is demonstrated as an excitation source for fluorescence detection in capillary electrophoresis. It is based on a parabolically shaped micro-light emitting diode (μ-LED) array with a custom band-pass optical interference filter (IF) deposited at the back of the LED substrate. The GaN μ-LED array consisted of 270 individual μ-LED elements with a peak emission at 470 nm, each about 14 μm in diameter and operated as a single unit.

Origin of power fluctuations in GaN resonant-cavity light-emitting diodes.

Resonant-cavity light-emitting diodes (RCLEDs) with multiple InGaN/GaN quantum wells have been grown on sapphire substrates. The emission was through the substrate, and the top contact consisted of a highly reflecting Pd/Ag metallization. The peak emission wavelength was measured to be 490 nm.