Effective suppression of nano-textured black silicon surface recombination channels through sputtered aluminum oxide: A comparison study with ALD grown films.

This accepted manuscript was withdrawn on 2 November 2020 on the author's request.In this work, the effective surface passivation of nano-textured silicon (NT-Si) using sputtered aluminum oxide (AlOx) films has been demonstrated and established a comparison with atomic layer deposition (ALD) grown AlOx films. Silver assisted wet chemical etching (SAWCE) is used to prepare optically black NT-Si.