Tellurium/Bismuth Selenide van der Waals Heterojunction for Self-Driven, Broadband Photodetection and Polarization-Sensitive Application.

Broadband detection technology is crucial in the fields of astronomy and environmental surveying. Two dimensional (2D) materials have emerged as promising candidates for next-generation broadband photodetectors with the characteristics of high integration, multi-dimensional sensing, and low power consumption. Among these, 2D tellurium (Te) is particularly noteworthy due to its excellent mobility, tunable bandgap, and air stability.

Theoretical Study of Quaternary nBp InGaAsSb SWIR Detectors for Room Temperature Condition.

This paper presents a theoretical analysis of an nBp infrared barrier detector's performance intended to operate at a room temperature (300 K) based on AB materials-InGaAsSb quaternary compound-lattice-matched to the GaSb substrate with a p-n heterojunction ternary AlGaSb barrier. Numerical simulations were performed using a commercial Crosslight Software-package APSYS. The band structure of the nBp detector and the electric field distribution for the p-n heterojunction with and without a potential barrier were determined.

The Influence of Etching Method on the Occurrence of Defect Levels in III-V and II-VI Materials.

The influence of the etching method on the occurrence of defect levels in InAs/InAsSb type-II superlattice (T2SLs) and MCT photodiode is presented. For both analyzed detectors, the etching process was performed by two methods: wet chemical etching and dry etching using an ion beam (RIE-reactive ion etching). The deep-level transient spectroscopy (DLTS) method was used to determine the defect levels occurring in the analyzed structures.

Performance of Low-Dimensional Solid Room-Temperature Photodetectors-Critical View.

In the last twenty years, nanofabrication progress has allowed for the emergence of a new photodetector family, generally called low-dimensional solids (LDSs), among which the most important are two-dimensional (2D) materials, perovskites, and nanowires/quantum dots. They operate in a wide wavelength range from ultraviolet to far-infrared. Current research indicates remarkable advances in increasing the performance of this new generation of photodetectors.

Optical Characterization of the Interband Cascade LWIR Detectors with Type-II InAs/InAsSb Superlattice Absorber.

The long-wave infrared (LWIR) interband cascade detector with type-II superlattices (T2SLs) and a gallium-free ("Ga-free") InAs/InAsSb (x = 0.39) absorber was characterized by photoluminescence (PL) and spectral response (SR) methods. Heterostructures were grown by molecular beam epitaxy (MBE) on a GaAs substrate (001) orientation.

The Perovskite Optoelectronic Devices - A Look at the Future.

The perovskite materials are broadly incorporated into optoelectronic devices due to a number of advantages. Their rapid technological progress is related to the relatively simple fabrication process, low production cost and high efficiency. Significant improvement is made in the light emitting, detection performance and device design especially operating in the visible and near-infrared regions.

Perovskite versus Standard Photodetectors.

Perovskites have been largely implemented into optoelectronics as they provide several advantages such as long carrier diffusion length, high absorption coefficient, high carrier mobility, shallow defect levels and finally, high crystal quality. The brisk technological development of perovskite devices is connected to their relative simplicity, high-efficiency processing and low production cost. Significant improvement has been made in the detection performance and the photodetectors' design, especially operating in the visible (VIS) and near-infrared (NIR) regions.

Defect Analysis in a Long-Wave Infrared HgCdTe Auger-Suppressed Photodiode.

Deep defects in the long-wave infrared (LWIR) HgCdTe heterostructure photodiode were measured via deep-level transient spectroscopy (DLTS) and photoluminescence (PL). The n-P-π-N photodiode structure was grown by following the metal-organic chemical vapor deposition (MOCVD) technique on a GaAs substrate. DLTS has revealed two defects: one electron trap with an activation energy value of 252 meV below the conduction band edge, located in the low n-type-doped transient layer at the π-N interface, and a second hole trap with an activation energy value of 89 meV above the valence band edge, located in the π absorber.

Impact of Residual Compositional Inhomogeneities on the MCT Material Properties for IR Detectors.

HgCdTe is a well-known material for state-of-the-art infrared photodetectors. The interd-iffused multilayer process (IMP) is used for Metal-Organic Chemical Vapor Deposition (MOCVD) of HgCdTe heterostructures, enabling precise control of composition. In this method, alternating HgTe and CdTe layers are deposited, and they homogenize during growth due to interdiffusion, resulting in a near-uniform material.

Room-temperature low-threshold avalanche effect in stepwise van-der-Waals homojunction photodiodes.

Avalanche or carrier-multiplication effect, based on impact ionization processes in semiconductors, has a great potential for enhancing the performance of photodetector and solar cells. However, in practical applications, it suffers from high threshold energy, reducing the advantages of carrier multiplication. Here, we report on a low-threshold avalanche effect in a stepwise WSe structure, in which the combination of weak electron-phonon scattering and high electric fields leads to a low-loss carrier acceleration and multiplication.

The Genetic Background of Abnormalities in Metabolic Pathways of Phosphoinositides and Their Linkage with the Myotubular Myopathies, Neurodegenerative Disorders, and Carcinogenesis.

Myo-inositol belongs to one of the sugar alcohol groups known as cyclitols. Phosphatidylinositols are one of the derivatives of Myo-inositol, and constitute important mediators in many intracellular processes such as cell growth, cell differentiation, receptor recycling, cytoskeletal organization, and membrane fusion. They also have even more functions that are essential for cell survival.

Infrared HOT Photodetectors: Status and Outlook.

At the current stage of long-wavelength infrared (LWIR) detector technology development, the only commercially available detectors that operate at room temperature are thermal detectors. However, the efficiency of thermal detectors is modest: they exhibit a slow response time and are not very useful for multispectral detection. On the other hand, in order to reach better performance (higher detectivity, better response speed, and multispectral response), infrared (IR) photon detectors are used, requiring cryogenic cooling.

Infrared avalanche photodiodes from bulk to 2D materials.

Avalanche photodiodes (APDs) have drawn huge interest in recent years and have been extensively used in a range of fields including the most important one-optical communication systems due to their time responses and high sensitivities. This article shows the evolution and the recent development of AB, AB, and potential alternatives to formerly mentioned-"third wave" superlattices (SL) and two-dimensional (2D) materials infrared (IR) APDs. In the beginning, the APDs fundamental operating principle is demonstrated together with progress in architecture.

Cyclitols: From Basic Understanding to Their Association with Neurodegeneration.

One of the most common cyclitols found in eukaryotic cells-Myo-inositol (MI) and its derivatives play a key role in many cellular processes such as ion channel physiology, signal transduction, phosphate storage, cell wall formation, membrane biogenesis and osmoregulation. The aim of this paper is to characterize the possibility of neurodegenerative disorders treatment using MI and the research of other therapeutic methods linked to MI's derivatives. Based on the reviewed literature the researchers focus on the most common neurodegenerative diseases such as Alzheimer's disease, Parkinson's disease, Huntington's disease and Spinocerebellar ataxias, but there are also works describing other seldom encountered diseases.

Determination of the Strain Influence on the InAs/InAsSb Type-II Superlattice Effective Masses.

AB materials used for the superlattice (SL) fabrication have properties that enable the design of devices optimized for infrared (IR) detection. These devices are used in the military, industry, medicine and in other areas of science and technology. The paper presents the theoretical assessment and analysis of the InAs/InAsSb type-II superlattice (T2SL) (grown on GaSb buffer layer) strain impact on the bandgap energy and on the effective masses of electrons and holes at 150 K.

Study of HgCdTe (100) and HgCdTe (111)B Heterostructures Grown by MOCVD and Their Potential Application to APDs Operating in the IR Range up to 8 µm.

The trend related to reach the high operating temperature condition (HOT, temperature, > 190 K) achieved by thermoelectric (TE) coolers has been observed in infrared (IR) technology recently. That is directly related to the attempts to reduce the IR detector size, weight, and power dissipation (SWaP) conditions. The room temperature avalanche photodiodes technology is well developed in short IR range (SWIR) while devices operating in mid-wavelength (MWIR) and long-wavelength (LWIR) require cooling to suppress dark current due to the low energy bandgap.

InAsSb-Based Infrared Photodetectors: Thirty Years Later On.

In 1989, one author of this paper (A.R.) published the very first review paper on InAsSb infrared detectors.

Influence of GaAs and GaSb substrates on detection parameters of InAs/GaSb superlattice-based mid-infrared interband cascade photodetectors.

The paper presents electrical and optical properties of interband cascade infrared photodetectors with InAs/GaSb type-II superlattice absorbers. We compare the detection parameters of detectors grown on the native GaSb substrate and lattice-mismatched GaAs substrate and seek solutions to enhance device performance, specifically with using an optical immersion. The detectors grown on GaAs have better detection parameters at room temperature, but, at lower temperatures, the misfit dislocations become more important, and detectors grown on GaSb become better.

Discovery of Potent and Selective Antibody-Drug Conjugates with Eg5 Inhibitors through Linker and Payload Optimization.

Targeted antimitotic agents are a promising class of anticancer therapies. Herein, we describe the development of a potent and selective antimitotic Eg5 inhibitor based antibody-drug conjugate (ADC). Preliminary studies were performed using proprietary Eg5 inhibitors which were conjugated onto a HER2-targeting antibody using maleimido caproyl valine-citrulline para-amino benzocarbamate, or MC-VC-PABC cleavable linker.

Sensing Infrared Photons at Room Temperature: From Bulk Materials to Atomic Layers.

Room-temperature operating means a profound reduction of volume, power consumption, and cost for infrared (IR) photodetectors, which promise a wide range of applications in both military and civilian areas, including individual soldier equipment, automatic driving, etc. Inspired by this fact, since the beginning of 1990s, great efforts have been made in the development of uncooled thermal detectors. During the last two decades, similar efforts have been devoted using IR photon detectors, especially based on photovoltaic effects.

InAs/InAsSb Strain-Balanced Superlattices for Longwave Infrared Detectors.

The InAs/InAsSb type-II superlattices (T2SLs) grown on a GaSb buffer layer and GaAs substrates were theoretically investigated. Due to the stability at high operating temperatures, T2SLs could be used for detectors operating in the longwave infrared (LWIR) range for different sensors to include, e.g.

Nicotinamide Phosphoribosyltransferase Inhibitor as a Novel Payload for Antibody-Drug Conjugates.

Antibody-drug conjugates (ADCs) are a novel modality that allows targeted delivery of potent therapeutic agents to the desired site. Herein we report our discovery of NAMPT inhibitors as a novel nonantimitotic payload for ADCs. The resulting anti-c-Kit conjugates ( and ) demonstrated efficacy in the c-Kit positive gastrointestinal stromal tumor GIST-T1 xenograft model in a target-dependent manner.

Performance prediction of p-i-n HgCdTe long-wavelength infrared HOT photodiodes.

Recently, an enhanced computer program was applied to explain in detail the influence of different recombination mechanisms (Auger, radiative, and Shockley-Read-Hall) on the performance of high-operation-temperature, long-wavelength, infrared p-i-n HgCdTe heterojunction photodiodes. It is shown that the photon recycling effect drastically limits the influence of radiative recombination on the performance of small pixel HgCdTe photodiodes. The computer program is based on a solution of the carrier transport equations, as well as the photon transport equations for semiconductor heterostructures.