Very large photoresponsiviy and high photocurrent linearity for Ge-dot/SiO/SiGe photoMOSFETs under gate modulation.

We report a novel visible-near infrared photoMOSFET containing a self-organized, gate-stacking heterostructure of SiO/Ge-dot/SiO/SiGe-channel on Si substrate that is simultaneously fabricated in a single oxidation step. Our typical photoMOSFETs exhibit very large photoresponsivity of 1000-3000A/W at low optical power (< 0.1μW) or large photocurrent gain of 10-10A/A with a wide dynamic power range of at least 6 orders of magnitude (nW-mW) linearity at 400-1250 nm illumination, depending on whether the photoMOSFET operates at V = + 3- + 4.