Correction: Improved isoprene detection performance of Si-doped WO films deposited by sputtering and post-annealing.

[This corrects the article DOI: 10.1039/D4RA00184B.].

Improved isoprene detection performance of Si-doped WO films deposited by sputtering and post-annealing.

Si-doped WO films were sputtered at room temperature and then annealed in air at 500 °C. The Si doping resulted in structural distortion from space group 2/ to . A high density of pores with a diameter of ∼20 nm was observed in the films, which is ideal for gas sensing applications because of the easy diffusion of gas.