Aluminum-Doped Indium Oxide Electron Transport Layer Grown by Atomic Layer Deposition: Highly Efficient and Damage-Resistant Interconnection Solution for All-Perovskite Tandem Solar Cells with 25.46% Efficiency.

In fabricating high-efficiency all-perovskite tandem solar cells (APTSCs) with a p-i-n configuration, the electron transport layer (ETL) plays a critical role in facilitating the transport of photogenerated electrons from the front cell to the recombination layer and protecting the front cell from damage during rear cell fabrication. This study introduces aluminum-doped InO (AIO) films grown by atomic layer deposition (ALD) as a promising ETL for high-efficiency APTSCs. ALD-grown AIO films with an optimized Al concentration exhibit superior charge transport characteristics, excellent transparency, and damage-resistant barrier properties against solution infiltration compared with conventional SnO ETLs and undoped ALD InO.