Community-Based Measurements Reveal Unseen Differences during Air Pollution Episodes.

Short-term exposure to fine particulate matter (PM) pollution is linked to numerous adverse health effects. Pollution episodes, such as wildfires, can lead to substantial increases in PM levels. However, sparse regulatory measurements provide an incomplete understanding of pollution gradients.

Long-term calibration models to estimate ozone concentrations with a metal oxide sensor.

Ozone (O) is a potent oxidant associated with adverse health effects. Low-cost O sensors, such as metal oxide (MO) sensors, can complement regulatory O measurements and enhance the spatiotemporal resolution of measurements. However, the quality of MO sensor data remains a challenge.

Patterns of distributive environmental inequity under different PM air pollution scenarios for Salt Lake County public schools.

Previous studies have cataloged social disparities in air pollution exposure in US public schools with respect to race/ethnicity and socioeconomic status. These studies rely upon chronic, averaged measures of air pollution, which fosters a static conception of exposure disparities. This paper examines PM exposure disparities in Salt Lake County (SLC), Utah public schools under three different PM scenarios-relatively clean air, a moderate winter persistent cold air pool (PCAP), and a major winter PCAP-with respect to race/ethnicity, economic deprivation, student age, and school type.

Doping-Free Complementary Logic Gates Enabled by Two-Dimensional Polarity-Controllable Transistors.

Atomically thin two-dimensional (2D) materials belonging to transition metal dichalcogenides, due to their physical and electrical properties, are an exceptional vector for the exploration of next-generation semiconductor devices. Among them, due to the possibility of ambipolar conduction, tungsten diselenide (WSe) provides a platform for the efficient implementation of polarity-controllable transistors. These transistors use an additional gate, named polarity gate, that, due to the electrostatic doping of the Schottky junctions, provides a device-level dynamic control of their polarity, that is, n- or p-type.

Polarity control in WSe2 double-gate transistors.

As scaling of conventional silicon-based electronics is reaching its ultimate limit, considerable effort has been devoted to find new materials and new device concepts that could ultimately outperform standard silicon transistors. In this perspective two-dimensional transition metal dichalcogenides, such as MoS2 and WSe2, have recently attracted considerable interest thanks to their electrical properties. Here, we report the first experimental demonstration of a doping-free, polarity-controllable device fabricated on few-layer WSe2.

Nanowire systems: technology and design.

Nanosystems are large-scale integrated systems exploiting nanoelectronic devices. In this study, we consider double independent gate, vertically stacked nanowire field effect transistors (FETs) with gate-all-around structures and typical diameter of 20 nm. These devices, which we have successfully fabricated and evaluated, control the ambipolar behaviour of the nanostructure by selectively enabling one type of carriers.