Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS field-effect transistors.

Helium ion irradiation is a known method of tuning the electrical conductivity and charge carrier mobility of novel two-dimensional semiconductors. Here, we report a systematic study of the electrical performance of chemically synthesized monolayer molybdenum disulfide (MoS) field-effect transistors irradiated with a focused helium ion beam as a function of increasing areal irradiation coverage. We determine an optimal coverage range of approx.

MoS Memtransistors Fabricated by Localized Helium Ion Beam Irradiation.

Two-dimensional (2D) layered semiconductors have recently emerged as attractive building blocks for next-generation low-power nonvolatile memories. However, challenges remain in the controllable fabrication of bipolar resistive switching circuit components from these materials. Here, the experimental realization of lateral memtransistors from monolayer single-crystal molybdenum disulfide (MoS) utilizing a focused helium ion beam is reported.

Oxide-mediated recovery of field-effect mobility in plasma-treated MoS.

Precise tunability of electronic properties of two-dimensional (2D) nanomaterials is a key goal of current research in this field of materials science. Chemical modification of layered transition metal dichalcogenides leads to the creation of heterostructures of low-dimensional variants of these materials. In particular, the effect of oxygen-containing plasma treatment on molybdenum disulfide (MoS) has long been thought to be detrimental to the electrical performance of the material.

Elemental preference and atomic scale site recognition in a Co-Al-W-base superalloy.

Using state-of-the-art atomic scale super energy dispersive X-ray spectroscopy and high angle annular dark field imaging this study reveals the elemental partitioning preference between the γ' and γ phases in a Co-Al-W-Ti-Ta superalloy and the site preference of its alloying elements in the ordered L1 γ' phase. A semi-quantitative analysis of atomic column compositions in the ordered L1 γ' structure is provided. Co atoms were found to occupy the {1/2, 1/2, 0} face-center positions whereas Al, W, Ti and Ta atoms prefer to occupy the {0, 0, 0} cube corner positions in the L1 γ phase.

Correlation of Emulsion Structure with Cellular Uptake Behavior of Encapsulated Bioactive Nutrients: Influence of Droplet Size and Interfacial Structure.

In this study, an in vitro Caco-2 cell culture assay was employed to evaluate the correlation between emulsion structure and cellular uptake of encapsulated β-carotene. After 4 h of incubation, an emulsion stabilized with whey protein isolate showed the highest intracellular accumulation of β-carotene (1.06 μg), followed by that stabilized with sodium caseinate (0.

Effects of a nanoceria fuel additive on the physicochemical properties of diesel exhaust particles.

Nanoceria (i.e., CeO nanoparticles) fuel additives have been used in Europe and elsewhere to improve fuel efficiency.

Precise milling of nano-gap chains in graphene with a focused helium ion beam.

A focused helium ion beam was used to introduce nano-sized gap chains in graphene. The effect of beam scanning strategies in the fabrication of the nano-gap chains was investigated. The tuning of graphene conductivity has been achieved by modulating the magnitude and uniformity of the ion dose and hence the morphology of the nano-gap chains.

Sub-5 nm graphene nanopore fabrication by nitrogen ion etching induced by a low-energy electron beam.

A flexible and efficient method to fabricate nanopores in graphene has been developed. A focused, low-energy (5 keV) electron beam was used to locally activate etching of a graphene surface in a low pressure (0.3 Pa) N2 environment.

Quantitative secondary electron imaging for work function extraction at atomic level and layer identification of graphene.

Two-dimensional (2D) materials usually have a layer-dependent work function, which require fast and accurate detection for the evaluation of their device performance. A detection technique with high throughput and high spatial resolution has not yet been explored. Using a scanning electron microscope, we have developed and implemented a quantitative analytical technique which allows effective extraction of the work function of graphene.

Enhancing capacitance behaviour of CoOOH nanostructures using transition metal dopants by ambient oxidation.

Cobalt hydrate and doped binary Co0.9M0.1OOH (M = Ni, Mn, Fe) nanorings of 100-300 nm were fabricated in solution through a facile ambient oxidation method.

Electrical-field-driven metal-insulator transition tuned with self-aligned atomic defects.

Recently, significant attention has been paid to the resistance switching (RS) behaviour in Fe3O4 and it was explained through the analogy of the electrically driven metal-insulator transition based on the quantum tunneling theory. Here, we propose a method to experimentally support this explanation and provide a way to tune the critical switching parameter by introducing self-aligned localized impurities through the growth of Fe3O4 thin films on stepped SrTiO3 substrates. Anisotropic behavior in the RS was observed, where a lower switching voltage in the range of 10(4) V cm(-1) is required to switch Fe3O4 from a high conducting state to a low conducting state when the electrical field is applied along the steps.

Nanopatterning and Electrical Tuning of MoS2 Layers with a Subnanometer Helium Ion Beam.

We report subnanometer modification enabled by an ultrafine helium ion beam. By adjusting ion dose and the beam profile, structural defects were controllably introduced in a few-layer molybdenum disulfide (MoS2) sample and its stoichiometry was modified by preferential sputtering of sulfur at a few-nanometer scale. Localized tuning of the resistivity of MoS2 was demonstrated and semiconducting, metallic-like, or insulating material was obtained by irradiation with different doses of He(+).

High throughput secondary electron imaging of organic residues on a graphene surface.

Surface organic residues inhibit the extraordinary electronic properties of graphene, hindering the development of graphene electronics. However, fundamental understanding of the residue morphology is still absent due to a lack of high-throughput and high-resolution surface characterization methods. Here, we demonstrate that secondary electron (SE) imaging in the scanning electron microscope (SEM) and helium ion microscope (HIM) can provide sub-nanometer information of a graphene surface and reveal the morphology of surface contaminants.