Sparse CNT networks with implanted AgAu nanoparticles: A novel memristor with short-term memory bordering between diffusive and bipolar switching.

With this work we introduce a novel memristor in a lateral geometry whose resistive switching behaviour unifies the capabilities of bipolar switching with decelerated diffusive switching showing a biologically plausible short-term memory. A new fabrication route is presented for achieving lateral nano-scaled distances by depositing a sparse network of carbon nanotubes (CNTs) via spin-coating of a custom-made CNT dispersion. Electrochemical metallization-type (ECM) resistive switching is obtained by implanting AgAu nanoparticles with a Haberland-type gas aggregation cluster source into the nanogaps between the CNTs and shows a hybrid behaviour of both diffusive and bipolar switching.