Surface modification is a highly effective strategy for addressing issues in lithium-rich layered oxide (LLO) cathodes, including phase transformation, particle cracking, oxygen gas release, and transition-metal ion dissolution. Existing single-/double-layer coating strategies face drawbacks such as poor component contact and complexity. Herein, we present the results of a low-temperature atomic layer deposition (ALD) process for creating a TiO/AlO bilayer on composite cathodes made of AS200 (LiNiCoMnO).
View Article and Find Full Text PDFPectin polymers are considered for lithium-ion battery electrodes. To understand the performance of pectin as an applied buffer layer, the electrical, magnetic, and optical properties of pectin films are investigated. This work describes a methodology for creating pectin films, including both pristine pectin and Fe-doped pectin, which are optically translucent, and explores their potential for lithium-ion battery application.
View Article and Find Full Text PDFAmong many transition-metal oxides, FeO anode based lithium ion batteries (LIBs) have been well-investigated because of their high energy and high capacity. Iron is known for elemental abundance and is relatively environmentally friendly as well contains with low toxicity. However, LIBs based on FeO suffer from particle aggregation during charge-discharge processes that affects the cycling performance.
View Article and Find Full Text PDFA facile solution process was employed to prepare CsPbI as an anode material for Li-ion batteries. Rietveld refinement of the X-ray data confirms the orthorhombic phase of CsPbI at room temperature. As obtained from bond valence calculations, strained bonds between Pb and I are identified within PbI octahedral units.
View Article and Find Full Text PDFIn this paper, the distribution of relaxation times (DRTs) functions are calculated numerically in Matlab for synthetic impedance data from single parallel [Formula: see text] circuit and two parallel [Formula: see text] circuits connected in series, experimental impedance data from supercapacitors and α-LiFeO anode based Li ion batteries. The quality of the impedance data is checked with the Kramers-Krönig (KK) relations. The DRTs are calculated within the KK compatible regime for all the systems using Tikhonov regularization (TR) method.
View Article and Find Full Text PDFWe studied the electrical transport of FeSe single-crystal nanowires exhibiting √5 × √5 Fe-vacancy order and mixed valence of Fe. FeSe compound has been identified as the parent phase of FeSe superconductor. A first-order metal-insulator (MI) transition of transition temperature ∼ 28 K is observed at zero magnetic fields ().
View Article and Find Full Text PDFWe investigate the dependence of decoherence on the mode number M in a multiple-mode Aharonov-Bohm (AB) interferometer. The design of the AB interferometer allows us to precisely determine M by the additivity rule of ballistic conductors; meanwhile, the decoherence rate is simultaneously deduced by the variance of the AB oscillation amplitude. The AB amplitude decreases and fluctuates with depopulating M.
View Article and Find Full Text PDFMagnetic domain walls are boundaries between regions with different configurations of the same magnetic order. In a magnetic insulator, where the magnetic order is tied to its bulk insulating property, it has been postulated that electrical properties are drastically different along the domain walls, where the order is inevitably disturbed. Here we report the discovery of highly conductive magnetic domain walls in a magnetic insulator, Nd2Ir2O7, that has an unusual all-in-all-out magnetic order, via transport and spatially resolved microwave impedance microscopy.
View Article and Find Full Text PDFNanostructures have many material, electronic, and optical properties that are not found in bulk systems and that are relevant for technological applications. For example, nanowires realized from III-V semiconductors can be grown into a wurtzite crystal structure. This crystal structure does not naturally exist in bulk where these materials form the zinc-blende counterpart.
View Article and Find Full Text PDFWe report the observation of a thermoelectric power factor in InAs nanowires that exceeds that predicted by a single-band bulk model by up to an order of magnitude at temperatures below about 20 K. We attribute this enhancement effect not to the long-predicted 1D subband effects but to quantum-dot-like states that form in electrostatically nonuniform nanowires as a result of interference between propagating states and 0D resonances.
View Article and Find Full Text PDFEfficient light-emitting diodes and photovoltaic energy-harvesting devices are expected to play an important role in the continued efforts towards sustainable global power consumption. Semiconductor nanowires are promising candidates as the active components of both light-emitting diodes and photovoltaic cells, primarily due to the added freedom in device design offered by the nanowire geometry. However, for nanowire-based components to move past the proof-of-concept stage and be implemented in production-grade devices, it is necessary to precisely quantify and control fundamental material properties such as doping and carrier mobility.
View Article and Find Full Text PDFAn aluminum nanowire switches from superconducting to normal as the current is increased in an upsweep. The switching current (I(s)) averaged over upsweeps approximately follows the depairing critical current (I(c)) but falls below it. Fluctuations in I(s) exhibit three distinct regions of behaviors and are nonmonotonic in temperature: saturation well below the critical temperature T(c), an increase as T(2/3) at intermediate temperatures, and a rapid decrease close to T(c).
View Article and Find Full Text PDFThe recent discovery of superconductivity with relatively high transition temperature (Tc) in the layered iron-based quaternary oxypnictides La[O(1-x)F(x)] FeAs by Kamihara et al. [Kamihara Y, Watanabe T, Hirano M, Hosono H (2008) Iron-based layered superconductor La[O1-xFx] FeAs (x = 0.05-0.
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