The progressive transition from Excimer to extreme ultraviolet (EUV) lithography is driving a need for flatter and smoother photomask blanks. It is, however, proving difficult to meet the next-generation specification with the conventional chemical mechanical polishing technology commonly used for finishing photomask blanks. This paper reports on the application of subaperture computer numerical control precessed bonnet polishing technology to the corrective finishing of photomask substrates for EUV lithography.
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