In-line synthesis of multi-octave phase-stable infrared light.

Parametric downconversion driven by modern, high-power sources of 10-fs-scale near-infrared pulses, in particular intrapulse difference-frequency generation (IPDFG), affords combinations of properties desirable for molecular vibrational spectroscopy in the mid-infrared range: broad spectral coverage, high brilliance, and spatial and temporal coherence. Yet, unifying these in a robust and compact radiation source has remained a key challenge. Here, we address this need by employing IPDFG in a multi-crystal in-line geometry, driven by the 100-W-level, 10.

Directly diode-pumped femtosecond Cr:ZnS amplifier with ultra-low intensity noise.

Diode-pumped Cr:ZnS oscillators have emerged as precursors for single-cycle infrared pulse generation with excellent noise performance. Here we demonstrate a Cr:ZnS amplifier with direct diode-pumping to boost the output of an ultrafast Cr:ZnS oscillator with minimum added intensity noise. Seeded with a 0.

Second and third-order dispersion compensating mirror pairs for the spectral range from 1.2-3.2µm.

We demonstrate the design, production, characterization and application of two dispersive complementary mirror pairs compensating second- and third-order dispersion, respectively. Both mirror pairs operate in the spectral range from 1.2-3.

Ultrabroadband etalon-free detection of infrared transients by van-der-Waals contacted sub-10-µm GaSe detectors.

We demonstrate ultrabroadband electro-optic detection of multi-THz transients using mechanically exfoliated flakes of gallium selenide of a thickness of less than 10 µm, contacted to a diamond substrate by van-der-Waals bonding. While the low crystal thickness allows for extremely broadband phase matching, the excellent optical contact with the index-matched substrate suppresses multiple optical reflections. The high quality of our structure makes our scheme suitable for the undistorted and artifact-free observation of electromagnetic waveforms covering the entire THz spectral range up to the near-infrared regime without the need for correction for the electro-optic response function.

Dielectric Engineering of Electronic Correlations in a van der Waals Heterostructure.

Heterostructures of van der Waals bonded layered materials offer unique means to tailor dielectric screening with atomic-layer precision, opening a fertile field of fundamental research. The optical analyses used so far have relied on interband spectroscopy. Here we demonstrate how a capping layer of hexagonal boron nitride (hBN) renormalizes the internal structure of excitons in a WSe monolayer using intraband transitions.

Direct Observation of Ultrafast Exciton Formation in a Monolayer of WSe.

Many of the fundamental optical and electronic properties of atomically thin transition metal dichalcogenides are dominated by strong Coulomb interactions between electrons and holes, forming tightly bound atom-like states called excitons. Here, we directly trace the ultrafast formation of excitons by monitoring the absolute densities of bound and unbound electron-hole pairs in single monolayers of WSe on a diamond substrate following femtosecond nonresonant optical excitation. To this end, phase-locked mid-infrared probe pulses and field-sensitive electro-optic sampling are used to map out the full complex-valued optical conductivity of the nonequilibrium system and to discern the hallmark low-energy responses of bound and unbound pairs.

Excitonic Valley Effects in Monolayer WS under High Magnetic Fields.

Transition-metal dichalcogenides can be easily produced as atomically thin sheets, exhibiting the possibility to optically polarize and read out the valley pseudospin of extremely stable excitonic quasiparticles present in these 2D semiconductors. Here, we investigate a monolayer of tungsten disulfide in high magnetic fields up to 30 T via photoluminescence spectroscopy at low temperatures. The valley degeneracy is lifted for all optical features, particularly for excitons, singlet and triplet trions, for which we determine the g factor separately.